提出了一种采用归一化光谱分布的总体差异表征AlGaInP基发光二极管(LED)阵列平均结温的新方法。采用光谱仪测量了不同衬底温度、不同注入功率时，3种LED阵列的归一化光谱分布，研究了归一化光谱分布差异与LED阵列平均结温的关系，并将归一化光谱分布差异表征平均结温的准确度与文献报道的中心波长法相比较。研究结果表明：无论是改变衬底温度还是注入功率，采用常用的1 nm采样间隔的光谱仪，归一化光谱分布差异与LED阵列平均结温的变化成良好的线性关系，线性度优于中心波长法，因此归一化光谱分布差异可以用于平均结温的测算，且准确度高于中心波长法。

A new method for determining the average junction temperature of AlGaInP-based light emitting diode (LED) array is developed based on the difference of normalized spectral distribution. The normalized spectra of three LED arrays with various injected powers and substrate temperatures are measured with a spectrometer, and the relationship between the differences of normalized spectral distributions and the average junction temperatures of LED arrays is analyzed. The accuracy of evaluating junction temperature with the difference of normalized spectral distributions is compared with the proposed method using center wavelength shift. The results show that the difference of normalized spectral distributions, measured with a spectrometer of 1 nm sample interval, changes linearly with the variation of average junction temperature whether it is induced by the change of the injected power or the substrate temperature, and the linearity is better than that of the method using center wavelength shift. Therefore, the difference of normalized spectral distributions can be used to estimate the average junction temperature, and the accuracy is better than the method using center wavelength shift.