不同双栅极设计对a-Si∶H TFT 特性影响
林致远, 马骏, 林亮, 杨成绍, 邹志翔, 黄寅虎, 文锺源, 王章涛. 不同双栅极设计对a-Si∶H TFT 特性影响[J]. 液晶与显示, 2016, 31(5): 460.
LIN Zhi-yuan, MA Jun, LIN Liang, YANG Cheng-shao, ZOU Zhi-xiang, HUANG Yin-hu, WEN Zhong-yuan, WANG Zhang-tao. Effect of different dual gate design on A-Si∶H TFT electrical characteristics[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(5): 460.
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林致远, 马骏, 林亮, 杨成绍, 邹志翔, 黄寅虎, 文锺源, 王章涛. 不同双栅极设计对a-Si∶H TFT 特性影响[J]. 液晶与显示, 2016, 31(5): 460. LIN Zhi-yuan, MA Jun, LIN Liang, YANG Cheng-shao, ZOU Zhi-xiang, HUANG Yin-hu, WEN Zhong-yuan, WANG Zhang-tao. Effect of different dual gate design on A-Si∶H TFT electrical characteristics[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(5): 460.