磁控溅射制备的W，WSi<sub>2</sub>，Si单层膜和W/Si，WSi<sub>2</sub>/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm，Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜。利用台阶仪对镀膜前后基底表面的面形进行了测试，计算并比较了不同膜系的应力值。结果表明：W单层膜表现出较大的压应力，而W/Si周期膜则表现为张应力。WSi2单层膜和WSi2/Si周期多层膜均表现为压应力，没有应力突变，应力特性最为稳定。因此，WSi2/Si材料组合是研制大膜对数X射线多层膜较好的材料组合。

Abstract

A series of W, WSi2, Si thin films and W/Si, WSi2/Si periodic multilayers were fabricated by using DC magnetron sputtering technology. Surface profiles before and after deposition were measured with a stylus profiler and the stresses were calculated. The results indicate that W thin films show relatively large compressive stress, while W/Si multilayers show tensile stress. Both WSi2 thin films and WSi2/Si periodic multilayers show compressive stress. WSi2/Si periodic multilayers have the most stable stress state with no sharp change, and is a good material combination for X-ray multilayer optics with a large number of bilayers.

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黄秋实, 李浩川, 朱京涛, 王晓强, 蒋励, 王占山, 唐永建. 磁控溅射制备的W，WSi₂，Si单层膜和W/Si，WSi₂/Si多层膜应力[J]. 强激光与粒子束, 2011, 23(6): 1659. Huang Qiushi, Li Haochuan, Zhu Jingtao, Wang Xiaoqiang, Jiang Li, Wang Zhanshan, Tang Yongjian. Stress analysis of W, WSi₂, Si single layers and W/Si, WSi₂/Si multilayers fabricated by magnetron sputtering[J]. High Power Laser and Particle Beams, 2011, 23(6): 1659.

磁控溅射制备的W，WSi₂，Si单层膜和W/Si，WSi₂/Si多层膜应力

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