V掺杂6H-SiC光导开关制备与性能研究
[1] Jayaraman S, Lee C H. Observation of two-photon conductivity in GaAs with nanosecond and picosecond light pulse[J]. Appl Phys Lett, 1972, 20: 392.
[2] Auston D H. Picosecond optoelectronic switching and gating in silicon[J]. Appl Phys Lett, 1975, 26(3): 101-103.
[3] Loubriel G M, Omalley M W, Zutavern F J. Toward pulsed power uses for photoconductive semiconductor switches: Closing switches[C]//Proc of the 6th Institute of Electrical and Electronic Engineers Pulsed Power Conference. 1987: 145-148.
[4] Willander M, Friesel M, Wahahb Q, et al. Silicon carbide and diamond for higher power device application[J]. J Mater Sci: Mater Electron, 2006, 17: 1-25.
[5] Caporaso G J. Linear induction accelerator approach for advanced radiography[C]//Proc of 1997 particle accelerator conference. 1997: 1248-1250.
[6] Saddow S E, Cho P S, Goldhar J, et al. Subnanosecond photovoltaic response in 6H-SiC[J]. Appl Phys Lett, 1994, 65(26): 3359-3361.
[9] Sullivan J S, Stanley J R. 6H-SiC photoconductive switches triggered at below band gap wavelengths[J]. IEEE Trans on Dielectrics and Electrical Insulation, 2007, 14(4): 980-985.
[10] James C, Hettler C, Dickens J. High voltage photoconductive swithches using semi-insulating vanadium doped 6H-SiC[C]//Proc of the 17th IEEE International Plused Power conference. 2009: 283-286.
[12] 袁建强.大功率光导开关关键技术研究[D].北京: 清华大学, 2009.(Yuan Jianqiang. Research on key technologies of high-power photoconductive semiconductor switch. Beijing: Tsinghua University, 2009)
[14] Kelkar K S, Islam N E, Kirawanich P, et al. On-state characteristics of a high-power photoconductive switch fabricated from compensated 6H silicon carbide[J]. IEEE Trans on Plasma Sci, 2008, 36(1): 287-292.
[15] Shi W, Xue H, Ma X R. Characteristics of photoconductivity oscillation in semi-insulating GaAs photoconductive semiconductor switches[J]. Acta Phys Sin, 2009, 58 (12): 8554-8559.
周天宇, 刘学超, 代冲冲, 黄维, 施尔畏. V掺杂6H-SiC光导开关制备与性能研究[J]. 强激光与粒子束, 2014, 26(4): 045043. Zhou Tianyu, Liu Xuechao, Dai Chongchong, Huang Wei, Shi Erwei. Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2014, 26(4): 045043.