为改善垂直腔面发射半导体激光器(VCSEL)的热特性, 提高其光电性能, 研制了新型辐射桥结构的VCSEL, 即采用辐射桥状的电流注入通道取代以往传统结构VCSEL的环形电流注入通道。研究表明辐射桥结构可以降低VCSEL器件的体电阻和热阻, 改善器件的模式特性。在同一外延片上, 采用相同的工艺制备了辐射桥结构与传统结构两种VCSEL器件, 并对两种器件的光电性能进行了对比测试。结果表明, 辐射桥结构VCSEL比传统结构的VCSEL微分电阻降低25％, 输出功率提高到1.6倍;辐射桥结构的VCSEL具有良好的温度特性与模式特性, 80 ℃时仍能正常激射, 60 ℃时最大输出功率可达17 mW, 器件的热阻可达1.95 ℃/mW;器件单模工作, 其总体性能远优于传统结构的VCSEL器件。

Using radiate bridge channels in place of ring channels for current injection, a new radiate bridge structure vertical cavity surface emitting laser (VCSEL) was fabricated in order to improve the thermal characteristic and its photo-electricity. The study on the new structure shows that the radiate bridge structure can reduce the electric and thermal resistance of VCSEL, and improve the device modes. The radiate bridge structure and the traditional structure VCSEL are made using the same process on the same wafer, and their performance are tested contrastively. The results show that the differential resistance of new structure VCSEL is 25% lower and the out power is 1.6 times higher than the traditional structure VCSEL. The characteristic of temperatures and modes is good, it can still operate at 80 ℃,the maximum output power can reach 17 mW at 60 ℃, and its thermal resistance is 1.95 ℃/mW. It operates with single mode all along, its performance is much better than traditional structure VCSEL.