新型结构垂直腔面发射激光器的研制

赵英杰; 郝永芹; 李广军; 冯源; 侯立峰

中国激光, 2009, 36 (8): 1946, 网络出版: 2009-08-13

新型结构垂直腔面发射激光器的研制

Fabrication of New Structure Vertical-Cavity Surface-Emitting Laser

论文大纲

赵英杰 ^1,*郝永芹 ¹李广军 ²冯源 ¹侯立峰 ¹

作者单位

¹ 长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022

² 中国人民解放军装甲兵技术学院, 吉林长春 130117

激光技术垂直腔面发射激光器辐射桥热阻 laser technique vertical cavity surface emitting laser radiate brigde thermal resistance

摘要

为改善垂直腔面发射半导体激光器(VCSEL)的热特性, 提高其光电性能, 研制了新型辐射桥结构的VCSEL, 即采用辐射桥状的电流注入通道取代以往传统结构VCSEL的环形电流注入通道。研究表明辐射桥结构可以降低VCSEL器件的体电阻和热阻, 改善器件的模式特性。在同一外延片上, 采用相同的工艺制备了辐射桥结构与传统结构两种VCSEL器件, 并对两种器件的光电性能进行了对比测试。结果表明, 辐射桥结构VCSEL比传统结构的VCSEL微分电阻降低25％, 输出功率提高到1.6倍;辐射桥结构的VCSEL具有良好的温度特性与模式特性, 80 ℃时仍能正常激射, 60 ℃时最大输出功率可达17 mW, 器件的热阻可达1.95 ℃/mW;器件单模工作, 其总体性能远优于传统结构的VCSEL器件。

Abstract

Using radiate bridge channels in place of ring channels for current injection, a new radiate bridge structure vertical cavity surface emitting laser (VCSEL) was fabricated in order to improve the thermal characteristic and its photo-electricity. The study on the new structure shows that the radiate bridge structure can reduce the electric and thermal resistance of VCSEL, and improve the device modes. The radiate bridge structure and the traditional structure VCSEL are made using the same process on the same wafer, and their performance are tested contrastively. The results show that the differential resistance of new structure VCSEL is 25% lower and the out power is 1.6 times higher than the traditional structure VCSEL. The characteristic of temperatures and modes is good, it can still operate at 80 ℃,the maximum output power can reach 17 mW at 60 ℃, and its thermal resistance is 1.95 ℃/mW. It operates with single mode all along, its performance is much better than traditional structure VCSEL.

参考文献

[1] . Iga, F. Koyama, S. Kinoshita. Surface emitting semiconductor lasers[J]. IEEE J. Quantum Electron., 1988, 24(9): 1845-1855.

[2] 李特, 宁永强, 孙艳芳等.980 nm高功率VCSEL的光束质量[J].中国激光, 2007, 34(5)：641～645

Li Te, Ning Yongqiang, Sun Yanfang et al.. Beam quality of 980 nm high power vertical-cavity surface-emitting laser [J]. Chinese J. Lasers, 2007, 34(5):641～645

[3] 李孝峰, 潘炜, 罗斌等. 多次外光反馈下垂直腔面发射激光器非线性动态特性理论研究[J]. 中国激光, 2004, 31(12)：1450～1454

Li Xiaofeng, Pan Wei, Luo Bin et al.. Theoretical study on nonlinear dynamics of vertical-cavity surface-emitting laser with multiple external optical feedbacks[J]. Chinese J. Lasers, 2004, 31(12):1450～1454

[4] 马建立, 郝永芹, 钟景昌等. 垂直腔面发射激光器中选择性氧化工艺稳定性研究[J]. 中国激光, 2007, 34(8):1055～1058

Ma Jianli, Hao Yongqin, Zhong Jingchang et al.. Study on stability of selective oxidation in vertical cavity surface emitting laser[J]. Chnese J. Lasers, 2007, 34(8):1055～1058

[5] 郝永芹, 刘文莉, 钟景昌等.垂直腔面发射激光器制作新工艺[J]. 中国激光, 2006, 33(4)：443～446

Hao Yongqin, Liu Wenli, Zhong Jingchang et al.. A new process in fabrication of vertical-cavity surface emitting laser[J]. Chinese J. Lasers, 2006, 33(4):443～446

[6] . L.Huffaker, D. G. Deppe, K. Kumar et al.. Native-oxide defined ring contact for low threshold vertical-cavity lasers[J]. Appl. Phys. Lett., 1994, 65(1): 97-99.

[7] . H. MacDougal, P. D. Dapkus, V. Pudikov et al.. Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors[J]. IEEE Photon. Technol. Lett., 1995, 7(3): 229-231.

[8] . G. Zhao, J. G. McInerney. Transient temperature response of vertical-cavity surface-emitting semiconductor lasers[J]. IEEE J. Quantum Electron., 1995, 31(9): 1668-1678.

[9] . G. Peters, B. J. Thibeault, D. B. Young et al.. Bond gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers[J]. Appl.Phys.Lett., 1993, 63(25): 3411-3414.

[10] Te Li, Yongqiang Ning, Yanfang Sun et al.. Temperature dependent characteristics of 980 nm two-dimensional bottom emitting VCSEL arrays[J]. Chin. Opt. Lett., 2007, 5 (s1):156～158

[11] . Tomoyuki, N. Tomohiro, K. Yoshihiro et al.. Thermal resistance reduction of vertical-cavity surface-emitting semiconductor lasers by thickness-modulated distributed Bragg reflector[J]. J. Appl. Phys., 2008, 47(8): 6772-6776.

[12] . 垂直腔面发射激光器的热学特性[J]. 半导体学报, 2005, 26(4): 805-811.

. . Thermal characteristics of VCSELs[J]. Chinese J. Semiconductors, 2005, 26(4): 805-811.

[13] 赵鼎, 林世鸣. VCSEL稳态热特性分析[J]．光电子·激光, 2004, 15(1)：21～24

Zhao Ding, Lin Shiming．Analysis of stable heat characteristics in VCSEL[J]．J. Optoelectronics·Laser, 2004, 15(1)：21～24

[14] C. Wilmsen, H. Temkin, A. Larry. Vertical-cavity Surface-Emitting Lasers:Design, Fabrication, Characterization, and Applications[M]. New York: Cambridge University Press, 1999

[15] . 850 nm氧化限制型VCSEL的温度特性[J]. 半导体学报, 2005, 26(5): 1024-1027.

. .Temperature characteristics of 850 nm oxide confined VCSELS[J]. Chinese J. Semiconductors, 2005, 26(5): 1024-1027.

[16] . Pu, C. W. Wilmsen, K. M. Geib et al.. Thermal resistance of VCSELs bonded to integrated circuits[J]. IEEE Photon. Technol. Lett., 1999, 11(12): 1554-1556.

赵英杰, 郝永芹, 李广军, 冯源, 侯立峰. 新型结构垂直腔面发射激光器的研制[J]. 中国激光, 2009, 36(8): 1946. Zhao Yingjie, Hao Yongqin, Li Guangjun, Feng Yuan, Hou Lifeng. Fabrication of New Structure Vertical-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2009, 36(8): 1946.

新型结构垂直腔面发射激光器的研制

关于本站 Cookie 的使用提示

全站搜索

新型结构垂直腔面发射激光器的研制

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索