Chinese Optics Letters, 2009, 7 (4): 04271, Published Online: Apr. 27, 2009  

Efficient above-band-gap light emission in germanium Download: 689次

Author Affiliations
Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USAE-mail: jfliu01@mit.edu
Abstract
We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20~296 K. The temperature-independence of the peak position at ~0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.
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Jifeng Liu, Xiaochen Sun, Yu Bai, Kenneth E., Eugene A., Lionel C., Jurgen Michel. Efficient above-band-gap light emission in germanium[J]. Chinese Optics Letters, 2009, 7(4): 04271.

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