CdS 含量对(Zn,Cd)S:Cu,Cl 发光材料光电子寿命的影响

采用复合基质材料ZnS 和CdS,制备了一系列黄色(Zn,Cd)S:Cu,Cl 粉末交流电致发光材料,利用微波吸收介电法分别测量了7 种(Zn,Cd)S:Cu,Cl 材料样品的光电子衰减过程。发现随着CdS 含量的增加,自由光电子寿命和浅束缚电子的寿命都有减小的趋势。分析认为发光材料基质中加入CdS 后,使导带底下降,改变了晶体的禁带宽度,使导带电子与价带空穴的复合几率增大,从而使光电子和浅束缚电子寿命缩短。但由于受到浅陷阱的束缚,浅束缚电子的寿命长于导带的自由电子寿命。

Abstract

The decay process of photoelectrons of (Zn,Cd)S:Cu,Cl luminescence materials after excitation with short pulse laser was investigated by using microwave absorption dielectric spectrum detection technique. It is shown that with the concentration of CdS increasing,the lifetimes of photoelectrons and shallow-trapped electrons have a descendent trend. Due to the factor that CdS arouses the descend of the conduction band bottom,it changes the forbidden bandwidth of the luminescent crystal and the combination rate of photoelectrons in conductive band and holes in value band increases,the lifetime of photoelectrons and shallow-trapped electrons is shortened. For the shallow traps shackling,the lifetime of shallow-trapped electrons is longer than that of photoelectrons.

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田少华, 孙明生, 李志强. CdS 含量对(Zn,Cd)S:Cu,Cl 发光材料光电子寿命的影响[J]. 激光与光电子学进展, 2010, 47(4): 041601. Tian Shaohua, Sun Mingsheng, Li Zhiqiang. Effect of CdS Concentration on Lifetime of Photoelectrons of (Zn,Cd) S:Cu,Cl Luminescent Materials[J]. Laser & Optoelectronics Progress, 2010, 47(4): 041601.

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