320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器

白治中; 徐志成; 周易; 姚华城; 陈洪雷; 陈建新; 丁瑞军; 何力

doi:doi:10.11972/j.issn.1001-9014.2015.06.015

红外与毫米波学报, 2015, 34 (6): 0716, 网络出版: 2016-01-19

320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器

320×256 dualcolor midwavelength infrared InAs/GaSb superlattice focal plane arrays

论文大纲

白治中 ^*徐志成周易姚华城陈洪雷陈建新丁瑞军何力

作者单位

中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室，上海 200083

超晶格双色焦平面 InAs/GaSb InAs/GaSb superlattice doublecolor focal plane array

摘要

报道了320 × 256元InAs /GaSb II 类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PNNP叠层双色外延结构，信号提取采用顺序读出方式.运用分子束外延技术在GaSb 衬底上生长超晶格材料，双波段红外吸收区的超晶格周期结构分别为7 ML InAs /7 ML GaSb和10 ML InAs /10 ML GaSb.焦平面阵列像元中心距为30 μm.在77 K 时测试，器件双色波段的50%响应截止波长分别为4.2 μm和5.5 μm，其中NonP器件平均峰值探测率达到6.0×1010 cmHz1/2W-1，盲元率为8.6%；PonN器件平均峰值探测率达到2.3×109 cmHz1/2W-1，盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.

Abstract

In this paper, we report research results of 256×256 dualcolor midwavelength infrared InAs/GaSb superlattice focal plane arrays. The detector structure is PNNP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. The respective structure of each absorption region are 7ML (InAs) /7ML (GaSb) and 10ML (InAs) /10ML (GaSb). The pixel center distance of the detector is 30μm. At 77 K measurement, the detector has 50% cutoff wavelength of 4.2 μm and 5.5 μm respectively; The NonP detector has a peak detectivity of 6.0×1010 cmHz1/2W-1 and dead pixels rate of 8.6%; The PonN detector has a peak detectivity of 2.3×109 cmHz1/2W-1 and dead pixels rate of 9.8%. Infrared images of both wavebands have been taken using infrared imaging test by adjusting devices voltage bias.

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白治中, 徐志成, 周易, 姚华城, 陈洪雷, 陈建新, 丁瑞军, 何力. 320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器[J]. 红外与毫米波学报, 2015, 34(6): 0716. BAI ZhiZhong, XU ZhiCheng, ZHOU Yi, YAO HuaCheng, CHEN HongLei, CHEN JianXin, DING RuiJun, HE Li. 320×256 dualcolor midwavelength infrared InAs/GaSb superlattice focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2015, 34(6): 0716.

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