Laser trimming of the operating wavelength of silicon nitride racetrack resonators

Greta De Paoli; Senta L. Jantzen; Thalia Dominguez Bucio; Ilias Skandalos; Christopher Holmes; Peter G. R. Smith; Milan M. Milosevic; Frederic Y. Gardes

doi:doi:10.1364/PRJ.382529

Photonics Research, 2020, 8 (5): 05000677, Published Online: Apr. 22, 2020

Laser trimming of the operating wavelength of silicon nitride racetrack resonators Download： 640次

Greta De Paoli ^1,2,*Senta L. Jantzen ²Thalia Dominguez Bucio ²Ilias Skandalos ²Christopher Holmes ²Peter G. R. Smith ²Milan M. Milosevic ²Frederic Y. Gardes ²

Author Affiliations

¹ Department of Information Engineering, Università degli Studi di Padova, Via Giovanni Gradenigo 6, 35131 Padova, Italy

² Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK

Figures & Tables

Fig. 4. Transmission spectra of fabricated racetrack resonators for different lengths of the exposed section of the resonator. (a) Device without oxide cladding and (b) device with oxide cladding.

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Fig. 5. Dependence of the resonant wavelength shift on the number of lines written across the racetrack. For each line, an arc length of approximately 14 μm has been exposed. (a) Device without oxide cladding and (b) device with oxide cladding.

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Fig. 6. (a) Transmission spectra of the simulated device, compared to the measured spectrum. (b) Transmission spectra obtained by simulation, before and after changing the refractive index of silicon nitride.

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Fig. 7. Measured resonant wavelength shift as a function of change in the ambient temperature. (a) Device without oxide cladding and (b) device with top oxide cladding.

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Greta De Paoli, Senta L. Jantzen, Thalia Dominguez Bucio, Ilias Skandalos, Christopher Holmes, Peter G. R. Smith, Milan M. Milosevic, Frederic Y. Gardes. Laser trimming of the operating wavelength of silicon nitride racetrack resonators[J]. Photonics Research, 2020, 8(5): 05000677.

Laser trimming of the operating wavelength of silicon nitride racetrack resonators Download： 640次

Fig. 1. SEM image of one of the resonators.

Fig. 2. Setup used for small spot direct UV writing in trimming experiments.

Fig. 3. Schematic of the device and the writing procedure.

Fig. 4. Transmission spectra of fabricated racetrack resonators for different lengths of the exposed section of the resonator. (a) Device without oxide cladding and (b) device with oxide cladding.

Fig. 5. Dependence of the resonant wavelength shift on the number of lines written across the racetrack. For each line, an arc length of approximately 14 μm has been exposed. (a) Device without oxide cladding and (b) device with oxide cladding.

Fig. 6. (a) Transmission spectra of the simulated device, compared to the measured spectrum. (b) Transmission spectra obtained by simulation, before and after changing the refractive index of silicon nitride.

Fig. 7. Measured resonant wavelength shift as a function of change in the ambient temperature. (a) Device without oxide cladding and (b) device with top oxide cladding.

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Laser trimming of the operating wavelength of silicon nitride racetrack resonators Download： 640次

Fig. 1. SEM image of one of the resonators.

Fig. 2. Setup used for small spot direct UV writing in trimming experiments.

Fig. 3. Schematic of the device and the writing procedure.

Fig. 4. Transmission spectra of fabricated racetrack resonators for different lengths of the exposed section of the resonator. (a) Device without oxide cladding and (b) device with oxide cladding.

Fig. 5. Dependence of the resonant wavelength shift on the number of lines written across the racetrack. For each line, an arc length of approximately 14 μm has been exposed. (a) Device without oxide cladding and (b) device with oxide cladding.

Fig. 6. (a) Transmission spectra of the simulated device, compared to the measured spectrum. (b) Transmission spectra obtained by simulation, before and after changing the refractive index of silicon nitride.

Fig. 7. Measured resonant wavelength shift as a function of change in the ambient temperature. (a) Device without oxide cladding and (b) device with top oxide cladding.

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