Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications

Miaofeng Li; Lei Wang; Xiang Li; Xi Xiao; Shaohua Yu

doi:doi:10.1364/PRJ.6.000109

Photonics Research, 2018, 6 (2): 02000109, Published Online: Jul. 10, 2018

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li ^1,2,3Lei Wang ^2,3Xiang Li ^2,3Xi Xiao ^2,3,*Shaohua Yu ^1,2,3

Author Affiliations

¹ Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

² State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China

³ National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

Copy Citation Text

Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 02000109.

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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 02000109.

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

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