Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications

Miaofeng Li; Lei Wang; Xiang Li; Xi Xiao; Shaohua Yu

doi:doi:10.1364/PRJ.6.000109

Photonics Research, 2018, 6 (2): 02000109, Published Online: Jul. 10, 2018

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li ^1,2,3Lei Wang ^2,3Xiang Li ^2,3Xi Xiao ^2,3,*Shaohua Yu ^1,2,3

Author Affiliations

¹ Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

² State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China

³ National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

Waveguide modulators Modulators Integrated optics devices

知识挖掘

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Integrated optics devices

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Modulators

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Waveguide modulators

4篇

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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 02000109.

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

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