Photonics Research, 2018, 6 (2): 02000109, Published Online: Jul. 10, 2018
Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications
Figures & Tables
Fig. 2. Microwave electrical mode distribution of the TWMZM cross section (a) before and (b) after the silicon substrate is removed.
Fig. 3. Microwave attenuation based on finite element method (FEM) simulations on unloaded CPS transmission lines before and after substrate removing of the wafer used in our design.
Fig. 4. Simulated EO S 21
Fig. 5. Fabrication process of the substrate removed modulator based on IME’s silicon photonics platform.
Fig. 6. Micrograph of the fabricated substrate removed silicon modulator viewed from above and the enlarged picture of the (a) edge couple, (b) phase shifter, and (c) the electrode region.
Fig. 7. (a) Measured EE S 21 S 21 − 4 V S 21 S 11 − 4 V
Fig. 8. Measured EO S 21
Fig. 10. Optical eye diagrams at the different rates of 70 GBaud / s 80 GBaud / s 90 GBaud / s V p p − 6 V
Fig. 11. Experimental setup for the substrate removed TWMZM PAM-4 eye-diagram measurements.
Fig. 12. Measured PAM-4 modulation optical eye diagrams at 28 GBaud / s 50 GBaud / s 56 GBaud / s − 6 V
Fig. 13. Experimental setup for the PAM-4 signal transmission based on the substrate removed silicon modulator even different distances.
Fig. 14. Measured curve of BER versus the received optical power for 56 GBaud / s 112 Gb / s − 6 V
Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 02000109.
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