252Cf源和重离子加速器对FPGA的单粒子效应
[1] Wang J J, Katz R B, Sun J S, et al. SRAM based re-programmable FPGA for space applications [J]. IEEE Trans on Nuclear Science, 1999, 46(6):1728-1735.
[2] 张宇宁, 张小林, 杨根庆, 等. 商用FPGA器件的单粒子效应模拟实验研究[J]. 宇航学报, 2009, 30(5): 2025-2030.(Zhang Yuning, Zhang Xiaolin, Yang Genqing, et al. Simulation experiment of single event effect in commercial FPGA. Journal of Astronautics, 2009, 30(5): 2025-2030)
[3] Allen G R, Swift G M. Single event effects test results for advanced field programmable gate arrays [C]//Radiation Effects Data Workshop. 2006:115-120.
[4] 冯彦君, 华更新, 刘淑芬, 等. 航天电子抗辐射研究综述[J]. 宇航学报, 2007, 28(5): 1071-1080.(Feng Yanjun, Hua Gengxin, Liu Shufen, et al. Radiation hardness for space electronics. Journal of Astronautics, 2007, 28(5): 1071-1080)
[5] Leroy D, Gaillard R, Schaefer E, et al. Variation of SRAM alpha-induced soft error rate with technology node [C]//Rhodes: On-Line Testing Symposium, 2008:253-257.
[6] Felix J A, Dodd P E, Shaneyfelt M R, et al. Radiation response and variability of advanced commercial foundry technologies[J]. IEEE Trans on Nuclear Science, 2006, 53(6):3187-3194.
[7] Duzellier S, Ecoffet R. Recent trends in single-event effect ground testing[J]. IEEE Trans on Nuclear Science, 1996, 43(2):671-677.
[8] Stephen J H, Sanderson T K, Mapper D, et al. Cosmic ray simulation experiments for the study of single event upsets and latch-up in CMOS memories [J]. IEEE Trans on Nuclear Science, 1983, 30(6):4464-4469.
[9] Miyahira T F, Johnston A H, Becker H N, et al. Catastrophic latchup in CMOS analog-to-digital converters[J]. IEEE Trans on Nuclear Science, 2001, 48(6):1833-1840.
[10] Wang J J, Samiee S, Chen H S, et al. Total ionizing dose effects on flashed-based field programmable gate array[J]. IEEE Trans on Nuclear Science, 2004, 51(6):3759-3766.
[11] 薛玉雄, 曹洲, 杨世宇, 等. 单粒子效应不同模拟源的等效性实验研究初探[J]. 核技术, 2008,31(2): 123-128.(Xue Yuxiong, Cao Zhou, Yang Shiyu, et al. Equivalent of different simulation source simulating single-event effect experiment. Nuclear Techniques, 2008,31(2): 123-128)
[12] 薛玉雄, 曹洲, 杨世宇, 等. IDT6116 单粒子敏感性评估试验技术研究[J]. 原子能科学技术, 2008,42(1): 22-27.(Xue Yuxiong, Cao Zhou, Yang Shiyu, et al. Study on IDT6116 single-event effect sensitivity evaluation test technology. Atomic Energy Science and Technology, 2008,42(1): 22-27)
[14] 陈盘训. 半导体器件的和集成电路的辐射效应[M]. 北京:国防工业出版社, 2005.(Chen Panxun. Radiation effects on semiconductor devices and integrated circuits. Beijing: National Defense Industry Press, 2005)
[15] Velazco R, Chapuis R, Labrunee M, et al. Comparison between californium and cyclotron SEU tests[J]. IEEE Trans on Nuclear Science, 1989, 36(6):2383-2387.
[16] Ecoffet R, Duzellier S. Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams. IEEE Trans on Nuclear Science, 1997, 44(6):2378-2385.
[17] 李永宏, 贺朝会, 周辉, 等. 应用锎源实验结果预估空间轨道单粒子翻转率[J]. 原子能科学技术, 2009, 43(11): 1029-1033.(Li Yonghong, He Chaohui, Zhou Hui, et al. Prediction for single event upset rate in space orbits based on 252Cf experimental results. Atomic Energy Science and Technology, 2009, 43(11): 1029-1033)
[18] Petersen. Single-event data analysis[J]. IEEE Trans on Nuclear Science, 2008, 55(6):2819-2841.
[19] 贺朝会, 李永宏, 杨海亮. 单粒子效应辐射模拟实验研究进展[J]. 核技术, 2007,30(4): 347-351.(He Chaohui, Li Yonghong, Yang Hailiang. Progress in simulation experiments of single event effects. Nuclear Techniques, 2007,30(4): 347-351.
[20] 侯明东, 张庆祥, 刘杰, 等. 15.14MeV/u 136Xe离子引起的单粒子效应[J]. 高能物理与核物理, 2002, 26(9): 904-908.(Hou Mingdong, Zhang Qingxiang, Liu Jie, et al. Single event effects induced by 15.14 MeV/u 136Xe Ions. High Energy Physics and Nuclear Physics, 2002, 26(9): 904-908)
范雪, 李平, 李威, 杨志明, 张斌, 郭红霞, 姚志斌. 252Cf源和重离子加速器对FPGA的单粒子效应[J]. 强激光与粒子束, 2011, 23(8): 2229. Fan Xue, Li Ping, Li Wei, Yang Zhiming, Zhang Bin, Guo Hongxia, Yao Zhibin. Single event effects on FPGA of californium252 and heavy-ion accelerator[J]. High Power Laser and Particle Beams, 2011, 23(8): 2229.