强激光与粒子束, 2013, 25 (2): 485, 网络出版: 2013-01-07   

大规模集成电路抗辐射性能无损筛选方法

Nondestructive screening method for radiation hardened performance of large scale integration
周东 1,2,3,*郭旗 1,2任迪远 1,2李豫东 1,2席善斌 1,2,3孙静 1,2文林 1,2
作者单位
1 中国科学院 新疆理化技术研究所, 乌鲁木齐 830011
2 新疆电子信息材料与器件重点实验室, 乌鲁木齐 830011
3 中国科学院 研究生院, 北京 100049
引用该论文

周东, 郭旗, 任迪远, 李豫东, 席善斌, 孙静, 文林. 大规模集成电路抗辐射性能无损筛选方法[J]. 强激光与粒子束, 2013, 25(2): 485.

Zhou Dong, Guo Qi, Ren Diyuan, Li Yudong, Xi Shanbin, Sun Jing, Wen Lin. Nondestructive screening method for radiation hardened performance of large scale integration[J]. High Power Laser and Particle Beams, 2013, 25(2): 485.

参考文献

[1] Saari A E. On the implications of R&M 2000 environmental stress screening[J]. IEEE Trans on Relia, 1987, 36(3):342345.

[2] Catelani M, Scarano V, Trotta I. Environmental stress screening for electronic equipment by random vibration: a critical approach to reliability estimation and planning[C]//Processdings of Instrumentation and Measurement Technology Conference. 2007:15.

[3] Fiorentino E, Saari A E. Planning of production reliability stressscreening programs[J]. IEEE Trans on Relia, 1983, 32(3):247252.

[4] Michael R C. Statistical methods for stress screen development[C]//Electronic Components and Technology Conference. 1996:925930.

[5] 徐曦.半导体器件无损筛选研究[J].信息与电子工程,1999,2:1826.(Xu Xi. Study on nondestructive screening of semiconductor. Information and Electronic Engineering, 1999, 2:1826)

[6] 刘晶晶,孙俊君,胡海云,等. 海洋腐蚀条件下材料坏境失效的寿命预测[J]. 物理学报, 2005,54(5):24142417.(Liu Jingjing, Sun Junjun, Hu Haiyun, et al. The life prediction for materials under the corrosion of seawater. Acta Physica Sinica,2005, 54(5):24142417)

[7] Shaneyfelt M R, Winokur P S, Fleetwood D M, et al. Effects of reliability screens on MOS charge trapping[J]. IEEE Trans on Nucl Sci, 1996, 43(3):865872.

[8] 袁国火,杨怀民,徐曦,等. 微电路FPGA的电离总剂量效应与加固技术[J]. 强激光与粒子束,2006,18(3):487490.(Yuan Guohuo, Yang Huaimin, Xu Xi, et al. Total ionizing effects and hardening techniques of microcircuit FPGA. High Power Laser and Particle Beams, 2006, 18(3):487490)

[9] 陈伟华, 杜磊, 庄奕琪, 等. MOS结构电离辐射效应模型研究[J]. 物理学报,2009,58(6):40904095.(Chen Weihua, Du Lei, Zhuang Yiqi, et al. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,2009, 58(6): 40904095)

[10] Degraeve R, Groeseneken G, Bellens R, et al. A consistent model for the thickness dependence of intrinsic breakdown in ultrathin oxides[C]//International Electron Devices Meeting. 1995:863866.

[11] 王欣. VDMOS器件可靠性的研究[D]. 成都:电子科技大学, 2009: 3145.(Wang Xin. Research on the reliability of VDMOS device. Chengdu:University of Electronic Science and Technology of China,2009:3145)

周东, 郭旗, 任迪远, 李豫东, 席善斌, 孙静, 文林. 大规模集成电路抗辐射性能无损筛选方法[J]. 强激光与粒子束, 2013, 25(2): 485. Zhou Dong, Guo Qi, Ren Diyuan, Li Yudong, Xi Shanbin, Sun Jing, Wen Lin. Nondestructive screening method for radiation hardened performance of large scale integration[J]. High Power Laser and Particle Beams, 2013, 25(2): 485.

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