强激光与粒子束, 2013, 25 (2): 485, 网络出版: 2013-01-07   

大规模集成电路抗辐射性能无损筛选方法

Nondestructive screening method for radiation hardened performance of large scale integration
周东 1,2,3,*郭旗 1,2任迪远 1,2李豫东 1,2席善斌 1,2,3孙静 1,2文林 1,2
作者单位
1 中国科学院 新疆理化技术研究所, 乌鲁木齐 830011
2 新疆电子信息材料与器件重点实验室, 乌鲁木齐 830011
3 中国科学院 研究生院, 北京 100049
摘要
空间辐射环境会对电子器件产生辐射损伤。由于商用器件性能普遍优于抗辐射加固器件,所以从商用器件中筛选出抗辐射性能优异的器件将在一定程度上提高空间电子系统的可靠性。结合数学回归分析与物理应力实验的方法,研究了集成电路抗辐射性能无损筛选技术。通过不同的外界能量注入及总剂量辐照实验,探究电路典型参数的应变情况与电路耐辐射性能的关系,并确定其辐射敏感参数;建立预测电路抗辐射性能的多元线性回归方程,并对应力条件下的回归方程进行辐照实验验证。结果显示,物理应力实验与数学回归分析结合的筛选方法减小了实验值与预测值的偏差,提高了预估方程的拟合优度和显著程度,使预估方程处于置信区间。
Abstract
The space radiation environment could induce radiation damage on the electronic devices. As the performance of commercial devices is generally superior to that of radiation hardened devices, it is necessary to screen out the devices with good radiation hardened performance from the commercial devices and applying these devices to space systems could improve the reliability of the systems. Combining the mathematical regression analysis with the different physical stressing experiments, we investigated the nondestructive screening method for radiation hardened performance of the integrated circuit. The relationship between the change of typical parameters and the radiation performance of the circuit was discussed. The irradiationsensitive parameters were confirmed. The pluralistic linear regression equation toward the prediction of the radiation performance was established. Finally, the regression equations under stress conditions were verified by practical irradiation. The results show that the reliability and accuracy of the nondestructive screening method can be elevated by combining the mathematical regression analysis with the practical stressing experiment.
参考文献

[1] Saari A E. On the implications of R&M 2000 environmental stress screening[J]. IEEE Trans on Relia, 1987, 36(3):342345.

[2] Catelani M, Scarano V, Trotta I. Environmental stress screening for electronic equipment by random vibration: a critical approach to reliability estimation and planning[C]//Processdings of Instrumentation and Measurement Technology Conference. 2007:15.

[3] Fiorentino E, Saari A E. Planning of production reliability stressscreening programs[J]. IEEE Trans on Relia, 1983, 32(3):247252.

[4] Michael R C. Statistical methods for stress screen development[C]//Electronic Components and Technology Conference. 1996:925930.

[5] 徐曦.半导体器件无损筛选研究[J].信息与电子工程,1999,2:1826.(Xu Xi. Study on nondestructive screening of semiconductor. Information and Electronic Engineering, 1999, 2:1826)

[6] 刘晶晶,孙俊君,胡海云,等. 海洋腐蚀条件下材料坏境失效的寿命预测[J]. 物理学报, 2005,54(5):24142417.(Liu Jingjing, Sun Junjun, Hu Haiyun, et al. The life prediction for materials under the corrosion of seawater. Acta Physica Sinica,2005, 54(5):24142417)

[7] Shaneyfelt M R, Winokur P S, Fleetwood D M, et al. Effects of reliability screens on MOS charge trapping[J]. IEEE Trans on Nucl Sci, 1996, 43(3):865872.

[8] 袁国火,杨怀民,徐曦,等. 微电路FPGA的电离总剂量效应与加固技术[J]. 强激光与粒子束,2006,18(3):487490.(Yuan Guohuo, Yang Huaimin, Xu Xi, et al. Total ionizing effects and hardening techniques of microcircuit FPGA. High Power Laser and Particle Beams, 2006, 18(3):487490)

[9] 陈伟华, 杜磊, 庄奕琪, 等. MOS结构电离辐射效应模型研究[J]. 物理学报,2009,58(6):40904095.(Chen Weihua, Du Lei, Zhuang Yiqi, et al. A model considering the ionizing radiation effects in MOS structure. Acta Physica Sinica,2009, 58(6): 40904095)

[10] Degraeve R, Groeseneken G, Bellens R, et al. A consistent model for the thickness dependence of intrinsic breakdown in ultrathin oxides[C]//International Electron Devices Meeting. 1995:863866.

[11] 王欣. VDMOS器件可靠性的研究[D]. 成都:电子科技大学, 2009: 3145.(Wang Xin. Research on the reliability of VDMOS device. Chengdu:University of Electronic Science and Technology of China,2009:3145)

周东, 郭旗, 任迪远, 李豫东, 席善斌, 孙静, 文林. 大规模集成电路抗辐射性能无损筛选方法[J]. 强激光与粒子束, 2013, 25(2): 485. Zhou Dong, Guo Qi, Ren Diyuan, Li Yudong, Xi Shanbin, Sun Jing, Wen Lin. Nondestructive screening method for radiation hardened performance of large scale integration[J]. High Power Laser and Particle Beams, 2013, 25(2): 485.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!