多胞MOSFET器件的射频建模和参数提取
[1] Allam E A, Manku T. A small-signal MOSFET model for radio frequency IC applications [J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 1997, 16(5):437-447.
[2] GAO Jian-Jun, Werthof A. Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit [J]. IET Microwave, Antennas and Propagation. 2009, 3(4):564-571.
[3] Xu Jian-Fei, Yan Nan, Zeng X, Gao Jian-Jun. A 3.4 dB NF k-band LNA with a tapped capacitor matching network in 65 nm CMOS technology [J]. International Journal of RF and Microwave Computer-Aided Engineering. 2015, 25(2):146-153.
[4] Eo Y, Eisenstadt W R. High-speed VLSI interconnect modeling based on S-parameter measurements [J]. IEEE Transaction On Components, Hybrids, and Manufacturing Technology. 1993, 16(5):555-562.
[5] Kwon I, Je M, Lee K, et al. A simple and analytical parameter-extraction method of a microwave MOSFET [J]. IEEE Transactions on Microwave Theory and Techniques. 2002, 50(6):1503-1509.
[6] Mei S, Ismail Y I. Modeling skin and proximity effects with reduced realizable RL circuits [J]. IEEE Transaction on Very Large Scale Integration System. 2004, 12(4):437-447.
[7] Gao Jian-Jun, Werthof A. Scalable small-signal and noise modeling for deep-submicrometer MOSFETs [J]. IEEE Transactions on Microwave Theory and Techniques. 2009, 57(4):737-744.
周影, 于盼盼, 高建军. 多胞MOSFET器件的射频建模和参数提取[J]. 红外与毫米波学报, 2017, 36(5): 550. ZHOU Ying, YU Pan-Pan, GAO Jian-Jun. Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device[J]. Journal of Infrared and Millimeter Waves, 2017, 36(5): 550.