高掺铒硅基氧化钽脊形光波导

首次提出了采用Er-Ta共溅、高温退火的方法, 在硅基二氧化硅表面制备高掺铒氧化钽(Er:Ta2O5)薄膜。利用棱镜耦合仪分析了铒掺杂浓度对Er:Ta2O5薄膜的折射率的影响, 结果表明: Er:Ta2O5薄膜的折射率随着Er掺杂浓度的增加而略微降低, 且所制备的薄膜没有明显的各向异性。在此基础上, 成功制备出Er掺杂浓度分别为0、2.5、5、7.5 mol%的硅基Er:Ta2O5脊形波导, 波导在1 550 nm波段可实现单模传输, 通过截断法得到波导在1 600 nm波长处的传输损耗分别为0.6、1.1、2.5、5.0 dB/cm。在所制备的Er:Ta2O5薄膜中, 尽管没有发现Er2O3结晶析出, 但薄膜中的Er3+会影响Ta2O5晶体的结晶程度, 进而增加波导的传输损耗。最终文中制备的掺杂浓度为2.5 mol%的硅基Er:Ta2O5脊形波导通过980 nm激光泵浦, 在1 531 nm信号波长下达到了3.1 dB/cm的净增益。

Abstract

High Erbium-doped tantalum pentoxide (Er:Ta2O5) films with different Er-doping concentrations was fabricated on silica-on-silicon substrate. The fabricating method of Er-Ta co-sputtering and following thermal oxidation was first proposed. The influence of high Er-doping concentration on refractive index of Er:Ta2O5 films was evaluated by prism coupler. The results indicate that the refractive index of Er:Ta2O5 films decreases slightly while Er-doping concentration increases and the films do not show anisotropy obviously. On this basis, 0, 2.5, 5, 7.5 mol% Er-doped Ta2O5 ridge waveguides were successfully fabricated on Si substrate. The waveguides were observed to be single-mode at 1 550 nm wavelength. Propagation loss of 0.6, 1.1, 2.5, 5.0 dB/cm at 1 600 nm wavelength was estimated using cut-off method, respectively. Although no crystallization of Er2O3 was found among the fabricated Er:Ta2O5 films, Er3+ could affect the crystallinity of Ta2O5 and then increase the propagation loss of the waveguide. Finally net optical gain of 3.1 dB/cm at 1 531 nm was demonstrated in a 2.5 mol% Er:Ta2O5 ridge waveguide when pumped with 980 nm laser.

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陈朝夕, 温浩康, 于浩, 李彬, 胡军, 郭天娥, 马小玲, 华平壤. 高掺铒硅基氧化钽脊形光波导[J]. 红外与激光工程, 2017, 46(8): 0821002. Chen Zhaoxi, Wen Haokang, Yu Hao, Li Bin, Hu Jun, Guo Tian′e, Ma Xiaoling, Hua Pingrang. Silicon-based tantalum pentoxide ridge waveguide with high erbium concentration[J]. Infrared and Laser Engineering, 2017, 46(8): 0821002.

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