光电子快报（英文版）, 2017, 13 (1): 45, Published Online: Sep. 13, 2018
Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate
Basic Information
| DOI: | 10.1007/s11801-017-6242-3 |
| 中图分类号: | -- |
| 栏目: | Materials |
| 项目基金: | This work has been supported by the National Natural Science Foundation of China (Nos.51472229, 61422405, 51202238, 61306051 and 61474109), the “100 Talent Program” of Chinese Academy of Sciences, and the Opening Funding of State Key Lab of Silicon Materials (No.SKL2014-4). |
| 收稿日期: | Oct. 31, 2016 |
| 修改稿日期: | -- |
| 网络出版日期: | Sep. 13, 2018 |
| 通讯作者: | YUAN Guo-dong (gdyuan@semi.ac.cn) |
| 备注: | -- |
ZHANG Lu, YUAN Guo-dong, WANG Qi, WANG Ke-chao, WU Ruiwei, LIU Zhi-qiang, LI Jin-min, WANG Jun-xi. Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate[J]. 光电子快报（英文版）, 2017, 13(1): 45.
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