Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate

ZHANG Lu; YUAN Guo-dong; WANG Qi; WANG Ke-chao; WU Ruiwei; LIU Zhi-qiang; LI Jin-min; WANG Jun-xi

doi:doi:10.1007/s11801-017-6242-3

光电子快报（英文版）, 2017, 13 (1): 45, Published Online: Sep. 13, 2018

Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate

ZHANG Lu YUAN Guo-dong ^*WANG Qi WANG Ke-chao WU Ruiwei LIU Zhi-qiang LI Jin-min WANG Jun-xi

Author Affiliations

State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Suppl. Mat.

ZHANG Lu, YUAN Guo-dong, WANG Qi, WANG Ke-chao, WU Ruiwei, LIU Zhi-qiang, LI Jin-min, WANG Jun-xi. Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate[J]. 光电子快报（英文版）, 2017, 13(1): 45.