过渡层对Ge衬底GaAs外延层晶体质量的影响
李晓婷, 赛小锋, 汪韬, 曹希斌, 石刚. 过渡层对Ge衬底GaAs外延层晶体质量的影响[J]. 激光与光电子学进展, 2007, 44(6): 58.
李晓婷, 赛小锋, 汪韬, 曹希斌, 石刚. Effect of Buffer Layer on GaAs Epitaxial Layer Quality on Ge Substrate[J]. Laser & Optoelectronics Progress, 2007, 44(6): 58.
[1] S. M. Ting, E. A. Fitzgerald, R. M. Sieg et al.. Range of defect morphologies on GaAs grown on offcut (001) Ge substrate [J]. 1998, 27(5):451~461
[2] 李晓婷,汪韬,赛小锋等. Ge衬底上GaInP2材料的生长研究[J]. 光子学报,2005, 34(6):909~911
[3] W.T.TSANG主编,江剑平译. 半导体材料生长技术[M]. 北京:清华出版社, 1993, 21~23
[4] . F. Yarn, C. I. Liao, C. L. Lin. Novel direct MOCVD growth of InxGa1-xAs and InP metamorphic layers on GaAs substrates[J]. J. Mater. Sci: Mater Electron, 2006, 17(8): 251-265.
[5] . G. Galitsyn, D. V. Dmitriev, V.G. Mansurov et al.. Critical phenomena in the b(2×4)→a(2×4) reconstruction transition on the (001) GaAs surface[J]. JETP Lett., 2005, 81(12): 629-633.
[6] . P. Soshnikov, G. E. Cirlin, A. A. Tonkikh et al.. Atomic structure of MBE-grown GaAs nanowhiskers[J]. Phys. Solid State, 2005, 47(12): 2213-2218.
[7] . P. Soshnikov, V. G. Dubrovskii, N. V. Sibirev et al.. Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates[J]. Tech. Phys. Lett., 2006, 32(6): 520-522.
[8] . Chriqui, G. Saint-Girons, S. Bouchoule et al.. Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate[J]. Electron. Lett., 2003, 39(23): 1658-1660.
[9] . E. Groenert. Monolithic integration of room-temperature CW GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers[J]. J. Appl. Phys., 2003, 93(1): 362-367.
[10] K.Eisenbeiser, R.Drooped, J.Finder. Epitaxially grown GaAs on Si[J]. Compound Semiconductors, 2002 EBSCO publishing,63~67.
[11] M. Morrow, D. Knudson, R. Alvin. Charge-collection efficiency of GaAs field effect transistors Fabricated with a low-temperature grown buffer layer: dependence on charge deposition profile[C]. IEEE Trans. Nuc. Sci., 2000, 47(3):498~508
[12] 汪韬,李宝霞,李晓婷等. 生长速率对低压MOCVD外延生长GaAs/Ge异质结的影响[J]. 光子学报,2002, 31(12):1479~1482
[13] 高鸿楷,何益民. 第六届全国MOCVD学术会议论文集[C].大连, 1999.9,116~117
[14] 李晓婷,汪韬,赛小锋等.GaAs/Ge太阳能电池电极银镀层结合力的研究[J]. 激光与光电子学进展,2004, 41(12): 31~33
李晓婷, 赛小锋, 汪韬, 曹希斌, 石刚. 过渡层对Ge衬底GaAs外延层晶体质量的影响[J]. 激光与光电子学进展, 2007, 44(6): 58. 李晓婷, 赛小锋, 汪韬, 曹希斌, 石刚. Effect of Buffer Layer on GaAs Epitaxial Layer Quality on Ge Substrate[J]. Laser & Optoelectronics Progress, 2007, 44(6): 58.