[1] Li Guoqiang, Zhang Xiaolu, Hua Hui, et al. Modified vertical bridgman method for growth of high-quality Cd1-xZnxTe crystals［J］.J Electron Mater, 2005, 34(9): 1215-1217.

[2] Zha M, Zappettini A, Calestani D, et al. Full encapsulated CdZnTe crystals by the vertical Bridgman method［J］. Cryst Growth, 2008, 310 (7/9): 2072-2074.

[3] Washington A L, Teague L C, Duff M C, et al. Atmospheric effects on the performance of CdZnTe single-crystal detectors［J］.Electron Mater, 2010,39(7): 1104-1105.

[4] Szeles C. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications［J］. Phys Stat Sol B, 2004, 241(3): 783-785.

[5] Sordo S D, Abbene L, Caroli E, et al. Progress in the development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications［J］. Sensors, 2009,9: 3506-3507.

[6] Bolotnikov A E, Camarda G C, Carini G A, et al. Performance characteristics of Frisch-ring CdZnTe detectors［J］. IEEE Trans Nucl Sci, 2006,53(2): 607-608.

[7] Prettymana T H, Ianakieva K D, Soldnerb S A, et al. Effect of differential bias on the transport of electrons in coplanar grid CdZnTe detectors［J］. Nucl Instrum Meth A, 2002,476: 658-660.

[8] Montémont G, Gentet M-C, Monnet O, et al. Simulation and design of orthogonal capacitive strip CdZnTe detectors［J］. IEEE Trans Nucl Sci, 2006,54: 855-856.

[9] Guerra P, Santos A, Darambara D G,et al. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging［J］. Phys D: Appl Phys, 2009,42: 175101.

[10] Wangerin K, Du Y, Jansen F. CZT performance for different anode pixel geometries and data corrections［J］. Nucl Instrum Meth A, 2011, 648: 37-41.

[11] Aillon E G, Tabary J, Gliere A, et al. Charge sharing on monolithic CdZnTe gamma-ray detectors: A simulation study［J］.Nucl Instrum Meth A, 2006, 563: 124-127.

[12] Kim J C, Anderson S E, Kaye W, et al. Charge sharing in common-grid pixelated CdZnTe detectors［J］. Nucl Instrum Meth A, 2011,654: 233-239.

[13] Benoit M, Hamel L A. Simulation of charge collection processes in semiconductor CdZnTe γ-ray detectors［J］. Nucl Instrum Meth A, 2009,606: 510-513.

[14] Kozorezov A G, Wigmorea J K. Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons［J］. Appl Phys, 2005,97: 074502.

[15] Hossain A, Bolotnikov A E, Camarda G S,et al. Defects in cadmium zinc telluride crystals revealed by etch-pit distributions［J］. Cryst Growth, 2008,310 (21): 4493-4495.

[16] Bolotnikov A E, Camarda G S, Carini G A, et al. Performance-limiting defects in CdZnTe detectors［J］. IEEE Trans Nucl Sci. 2007,54(4): 821-824.

[17] 黎淼，肖沙里，张流强，等. 基于CdZnTe像素阵列探测技术的伽玛源成像［J］.强激光与粒子束，2010，22(9): 2165-2167.(Li Miao, Xiao Shali, Zhang Liuqiang, et al. Gamma source imaging based on pixellated CdZnTe detection. High Power Laser and Particle Beams, 2010, 22(9): 2165-2167)

[18] 王玺，肖沙里，张流强，等.高能伽玛源下碲锌镉探测器的针孔成像［J］.强激光与粒子束，2010，22(10): 2448-2450.(Wang Xi, Xiao Shali, Zhang Liuqiang, et al. Pinhole imaging using CdZnTe detector for high-energy gamma source. High Power Laser and Particle Beams,2010，22(10): 2448-2450)

[19] 王玺，肖沙里，黎淼，等.高剂量X射线辐照下碲锌镉探测器的深度极化效应［J］.强激光与粒子束，2013，25(3): 773-775.(Wang Xi, Xiao Shali, Li Miao, et al. Further polarization effect of CdZnTe detectors under high flux X-ray irradiation. High Power Laser and Particle Beams， 2013， 25(3): 773-775)

[20] Wang Tao, Jie Wanqi, Xu Yadong, et al. Characterization of CdZnTe crystal grown by bottom-seeded Bridgman and Bridgman accelerated crucible rotation techniques［J］. Transactions of Nonferrous Metal Society of China, 2009,19 (3): 622-623.

[21] Bolotnikova A E, Hubert Chena C M, Cooka W R, et al. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors［J］. Nucl Instrum Meth A, 2003, 510 (3): 302-304.

[22] He Z. Review of the Shockley-Ramo theorem and its application in semiconductor gamma-ray detectors［J］. Nucl Instrum Meth A, 2001, 436 (1/2): 253-256.