Interface characterization of Mo/Si multilayers

Jiaoling Zhao; Hongbo He; Hu Wang; Kui Yi; Bin Wang; Yun Cui

doi:doi:10.3788/COL201614.083401

Chinese Optics Letters, 2016, 14 (8): 083401, Published Online: Aug. 3, 2018

Interface characterization of Mo/Si multilayers Download： 985次

Jiaoling Zhao ^1,2Hongbo He ^1,*Hu Wang ^1,2Kui Yi ¹Bin Wang ^1,2Yun Cui ¹

Author Affiliations

¹ Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

² University of Chinese Academy of Sciences, Beijing 100049, China

Figures & Tables

Fig. 1. Measured and fitted curve of GIXRR results.

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Fig. 2. (a) Regional XPS scan of the top Si layer for various etching times; (b) in-depth concentrate on the profile of the Mo/Si multilayer.

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Fig. 3. Regional XPS scan of (a) Si 2p and (b) Mo 3d at the Si-on-Mo interface; (c) Si 2p and (d) Mo 3d at the Mo-on-Si interface.

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Fig. 4. (a) HRTEM image for the cross-sectional structure of the Mo/Si multilayer; (b) the cross–sectional profile curve; (c) the Mo layer thickness.

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Fig. 5. (a) Two-layer and four-layer models; (b) the calculated reflectivity of the Mo/Si multilayers with MoSi2 interlayer compounds using the four-layer model.

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Table1. XPS Photoelectron Curve Fitting Results

Item	Si 2p		$Mo 3 d_{5 / 2} Mo 3 d_{3 / 2}$
Charge	${Si}^{2 -}$	${Si}^{+ 2 x}$	${Mo}^{4 +}$	${Mo}^{4 +}$
Composition	${MoSi}_{2}$	${SiO}_{x}$	${MoSi}_{2}$	${MoSi}_{2}$
B. E. S. (eV)	99.4	102.5	228.1	231.3
B. E. M. (eV)	99.4	101.3	228.1	231.3

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Table2. EUV Reflective Calculated Results（Units: Å）

Interlayer	$d_{Mo}$	$d_{Si}$	$d_{1}$	$d_{2}$	$σ_{Mo}$	$σ_{Si}$	$σ_{1}$	$σ_{2}$
${MoSi}_{2}$	24.10	40.61	3.15	2.62	0.11	0.6	1.09	0.25
${Mo}_{5} {Si}_{3}$	23.09	40.17	3.75	3.69	0.88	0.56	0.7	1.01
${Mo}_{3} Si$	22.52	40.28	3.18	4.68	1.12	1.01	0.22	0.51

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Jiaoling Zhao, Hongbo He, Hu Wang, Kui Yi, Bin Wang, Yun Cui. Interface characterization of Mo/Si multilayers[J]. Chinese Optics Letters, 2016, 14(8): 083401.

Interface characterization of Mo/Si multilayers Download： 985次

Fig. 1. Measured and fitted curve of GIXRR results.

Fig. 2. (a) Regional XPS scan of the top Si layer for various etching times; (b) in-depth concentrate on the profile of the Mo/Si multilayer.

Fig. 3. Regional XPS scan of (a) Si 2p and (b) Mo 3d at the Si-on-Mo interface; (c) Si 2p and (d) Mo 3d at the Mo-on-Si interface.

Fig. 4. (a) HRTEM image for the cross-sectional structure of the Mo/Si multilayer; (b) the cross–sectional profile curve; (c) the Mo layer thickness.

Fig. 5. (a) Two-layer and four-layer models; (b) the calculated reflectivity of the Mo/Si multilayers with MoSi2 interlayer compounds using the four-layer model.

Table1. XPS Photoelectron Curve Fitting Results

Table2. EUV Reflective Calculated Results（Units: Å）

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Interface characterization of Mo/Si multilayers Download： 985次

Fig. 1. Measured and fitted curve of GIXRR results.

Fig. 2. (a) Regional XPS scan of the top Si layer for various etching times; (b) in-depth concentrate on the profile of the Mo/Si multilayer.

Fig. 3. Regional XPS scan of (a) Si 2p and (b) Mo 3d at the Si-on-Mo interface; (c) Si 2p and (d) Mo 3d at the Mo-on-Si interface.

Fig. 4. (a) HRTEM image for the cross-sectional structure of the Mo/Si multilayer; (b) the cross–sectional profile curve; (c) the Mo layer thickness.

Fig. 5. (a) Two-layer and four-layer models; (b) the calculated reflectivity of the Mo/Si multilayers with MoSi2 interlayer compounds using the four-layer model.

Table1. XPS Photoelectron Curve Fitting Results

Table2. EUV Reflective Calculated Results（Units: Å）

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