发光学报, 2018, 39 (9): 1285, 网络出版: 2018-09-08  

MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响

Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
作者单位
1 北京工业大学微电子学院 光电技术教育部重点实验室, 北京 100124
2 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
引用该论文

韩军, 赵佳豪, 邢艳辉, 史峰峰, 杨涛涛, 赵杰, 王凯, 李焘, 邓旭光, 张宝顺. MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响[J]. 发光学报, 2018, 39(9): 1285.

HAN Jun, ZHAO Jia-hao, XING Yan-hui, SHI Feng-feng, YANG Tao-tao, ZHAO Jie, WANG Kai, LI Tao, DENG Xu-guang, ZHANG Bao-shun. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018, 39(9): 1285.

参考文献

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韩军, 赵佳豪, 邢艳辉, 史峰峰, 杨涛涛, 赵杰, 王凯, 李焘, 邓旭光, 张宝顺. MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响[J]. 发光学报, 2018, 39(9): 1285. HAN Jun, ZHAO Jia-hao, XING Yan-hui, SHI Feng-feng, YANG Tao-tao, ZHAO Jie, WANG Kai, LI Tao, DENG Xu-guang, ZHANG Bao-shun. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018, 39(9): 1285.

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