发光学报, 2018, 39 (9): 1285, 网络出版: 2018-09-08
MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响
Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)
图 & 表
韩军, 赵佳豪, 邢艳辉, 史峰峰, 杨涛涛, 赵杰, 王凯, 李焘, 邓旭光, 张宝顺. MOCVD生长Si衬底上HT-AlN缓冲层低生长压力对GaN薄膜的影响[J]. 发光学报, 2018, 39(9): 1285. HAN Jun, ZHAO Jia-hao, XING Yan-hui, SHI Feng-feng, YANG Tao-tao, ZHAO Jie, WANG Kai, LI Tao, DENG Xu-guang, ZHANG Bao-shun. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)[J]. Chinese Journal of Luminescence, 2018, 39(9): 1285.