SiGe/Si多量子阱中垂直方向红外吸收及共振色散效应
[1] Park J S,Karunasiri P R G,Wang K L.Intervalence-subband transition in SiGe/Si multiple quantum wells-normal incidence detection.Appl.Phys.Lett.,1992,61:681
[2] Levine B F,Gunapala S D,Kuo J M,et al.Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1-xAs quantum well infrared photodetectors.Appl.Phys.Lett.,1991,59:1864
[3] People R,Bean J C,Sputz S K,et al.Normal ineidence hole in quantum well infrared photodetectors in pseudomorphic GexSi1-x/Si.Thin Solid Films,1992,222:2720
[4] Almogy G,Shakouri A,Yariv A.Observation of birefringence induced by intersubband transitions in quantum well's.Appl.Phys.Lett.,1993,63:2720
[5] Yang D D,Julien F H,Lourtioz J M,et al.First demonstration of room-temperature intersubband-interband double-resonance spectroscopy of GaAs/AlGaAs quantum wells.IEEE Photon.Technol.Lett.,1990,26:398
[6] WU Lan.A study of photo-induced intersubband absorption in the SiGe/Si multiple quantum wells.Acta Photonica Sinica (吴兰.SiGe/Si量子阱中的光致子带间吸收研究.光子学报),2001,30:704
吴兰. SiGe/Si多量子阱中垂直方向红外吸收及共振色散效应[J]. 红外与毫米波学报, 2002, 21(2): 87. 吴兰. INFRARED ABSORPTION AT NORMAL INCIDENCE AND RESONANT DISPERSION EFFECT IN THE SiGe/Si MULTIPLE QUANTUM WELL[J]. Journal of Infrared and Millimeter Waves, 2002, 21(2): 87.