Te-free SbBi thin film as a laser heat-mode photoresist

Kui Zhang; Zhengwei Wang; Guodong Chen; Yang Wang; Aijun Zeng; Jing Zhu; Syarhei Avakaw; Heorgi Tsikhanchuk

doi:doi:10.3788/COL201917.093102

Chinese Optics Letters, 2019, 17 (9): 093102, Published Online: Jul. 29, 2019

Te-free SbBi thin film as a laser heat-mode photoresist Download： 857次

Kui Zhang ^1,2Zhengwei Wang ^1,2Guodong Chen ^1,2Yang Wang ^1,*Aijun Zeng ¹Jing Zhu ¹Syarhei Avakaw ³Heorgi Tsikhanchuk ³

Author Affiliations

¹ Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³ KBTEM-OMO Joint Stock Company, Minsk 220033, Republic of Belarus

Figures & Tables

Fig. 1. Basic characteristics of SbBi thin films. The AFM images of (a) as-deposited and (b) laser-irradiated SbBi thin films; (c) XRD patterns of as-deposited and laser-irradiated SbBi thin films; (d) absorption spectra of as-deposited SbBi thin film sample and glass substrate.

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Fig. 2. Comparison of wet-etching selectivity in 17% ${({NH}_{4})}_{2} S$ solution between as-deposited and laser-irradiated SbBi thin films. The laser irradiation power is fixed at 2 mW.

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Fig. 3. AFM images of fabricated structures on SbBi thin films: (a) line-type patterns without wet-etching; (b) line-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution; (c) dot-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution.

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Fig. 4. (a) Principle of preparation of small-period grating structures; (b) AFM image of grating structures with a period of 0.8 μm.

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Fig. 5. Images of complex pattern structures. The original pictures of (a) the Star of David and (b) logo of CAS. The structures fabricated on SbBi thin films: (c) the Star of David and (d) logo of CAS.

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Kui Zhang, Zhengwei Wang, Guodong Chen, Yang Wang, Aijun Zeng, Jing Zhu, Syarhei Avakaw, Heorgi Tsikhanchuk. Te-free SbBi thin film as a laser heat-mode photoresist[J]. Chinese Optics Letters, 2019, 17(9): 093102.

Te-free SbBi thin film as a laser heat-mode photoresist Download： 857次

Fig. 1. Basic characteristics of SbBi thin films. The AFM images of (a) as-deposited and (b) laser-irradiated SbBi thin films; (c) XRD patterns of as-deposited and laser-irradiated SbBi thin films; (d) absorption spectra of as-deposited SbBi thin film sample and glass substrate.

Fig. 2. Comparison of wet-etching selectivity in 17% ${({NH}_{4})}_{2} S$ solution between as-deposited and laser-irradiated SbBi thin films. The laser irradiation power is fixed at 2 mW.

Fig. 3. AFM images of fabricated structures on SbBi thin films: (a) line-type patterns without wet-etching; (b) line-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution; (c) dot-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution.

Fig. 4. (a) Principle of preparation of small-period grating structures; (b) AFM image of grating structures with a period of 0.8 μm.

Fig. 5. Images of complex pattern structures. The original pictures of (a) the Star of David and (b) logo of CAS. The structures fabricated on SbBi thin films: (c) the Star of David and (d) logo of CAS.

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Te-free SbBi thin film as a laser heat-mode photoresist Download： 857次

Fig. 1. Basic characteristics of SbBi thin films. The AFM images of (a) as-deposited and (b) laser-irradiated SbBi thin films; (c) XRD patterns of as-deposited and laser-irradiated SbBi thin films; (d) absorption spectra of as-deposited SbBi thin film sample and glass substrate.

Fig. 2. Comparison of wet-etching selectivity in 17% (NH4)2S solution between as-deposited and laser-irradiated SbBi thin films. The laser irradiation power is fixed at 2 mW.

Fig. 3. AFM images of fabricated structures on SbBi thin films: (a) line-type patterns without wet-etching; (b) line-type structures after wet-etching for 5 min in 17% (NH4)2S solution; (c) dot-type structures after wet-etching for 5 min in 17% (NH4)2S solution.

Fig. 4. (a) Principle of preparation of small-period grating structures; (b) AFM image of grating structures with a period of 0.8 μm.

Fig. 5. Images of complex pattern structures. The original pictures of (a) the Star of David and (b) logo of CAS. The structures fabricated on SbBi thin films: (c) the Star of David and (d) logo of CAS.

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Fig. 2. Comparison of wet-etching selectivity in 17% ${({NH}_{4})}_{2} S$ solution between as-deposited and laser-irradiated SbBi thin films. The laser irradiation power is fixed at 2 mW.

Fig. 3. AFM images of fabricated structures on SbBi thin films: (a) line-type patterns without wet-etching; (b) line-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution; (c) dot-type structures after wet-etching for 5 min in 17% ${({NH}_{4})}_{2} S$ solution.