L波段GaN自偏压功率放大器

李飞; 钟世昌

doi:doi:10.11805/tkyda201805.0918

太赫兹科学与电子信息学报, 2018, 16 (5): 918, 网络出版: 2019-06-10

L波段GaN自偏压功率放大器

L-band GaN self-bias power amplifier

论文大纲

李飞 ^*钟世昌

作者单位

南京电子器件研究所，江苏南京 210016

氮化镓(GaN) 自偏压内匹配 GaN self-bias internal match

摘要

介绍了一款L波段自偏压内匹配功率放大器。器件采用0.25 μm工艺GaN高电子迁移率晶体管(HEMT)管芯，内匹配技术对单胞管芯进行输入输出匹配，放大器的工作频带范围为1.2~1.4 GHz。采用自偏压技术，单电源供电，使电路更为简洁，使用方便。工作电压为28 V，占空比为10%，脉宽为300 μs，在输入功率为26 dBm时，频带内输出功率在40 dBm以上，功率附加效率大于60%，充分显示了GaN功率器件在单电源模块中的性能优势。

Abstract

An L-band self-bias internal matching power amplifier is proposed. The amplifier is fabricated by using 0.25 μm GaN High Electron Mobility Transistor(HEMT) chips, and internal matching techniques are utilized to perform input–output matching, and the operating frequency band of the amplifier is 1.2-1.4 GHz. Using self-bias technology, and single power supply, the circuit is more simple and easy for use. The working conditions are 28 V, 10% pulse duty ratio and 300 μs pulse width; when the input power is 26 dBm, the output power in the band is greater than 40 dBm, and the power added efficiency is more than 60%, which fully shows the performance advantages of GaN power devices in a single power supply module.

参考文献

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李飞, 钟世昌. L波段GaN自偏压功率放大器[J]. 太赫兹科学与电子信息学报, 2018, 16(5): 918. LI Fei, ZHONG Shichang. L-band GaN self-bias power amplifier[J]. Journal of terahertz science and electronic information technology, 2018, 16(5): 918.

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