外电场作用下InP电子结构与光学性质的计算
[1] Wang S. Fundamentals of Semiconductor Theory and Device Physics[M]. NJ: Prentice-Hall, Inc., 1989.
[2] Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys[J]. J. of Appl. Phys., 2001, 89(11): 5815.
[3] Herzinger C M, Snyder P G, Johs B, et al. InP optical constants between 0.75 and 5.0eV determined by variable-angle spectroscopic ellipsometry[J]. J. of Appl. Phys., 1995, 77(4): 1715-1724.
[4] Bouarissa N. The effect of hydrostatic pressure on the electronic and optical properties of InP[J]. Solid-State Electron., 2000, 44(12): 2193-2198.
[5] Lesecq M, Beaugeois M, Maricot S, et al. Optical switch using InP optical wire technology[J]. Proc. of SPIE, 2007, 6593: 659305-659305-11.
[6] 李晋闽, 郭里辉, 王力鸣, 等. 红外InGaAsP光电阴极研究[J]. 光子学报, 1991, 20(3): 262-269.
Li Jinmin, Guo Lihui, Wang Liming, et al. Research of infrared InGaAsP photocathode[J]. Acta Photonica Sinica, 1991, 20(3): 262-269.
[7] 刘 峰, 石 峰, 焦岗成, 等. 短波红外阈场助式光电阴极p-InGaAs/p-InP异质结设计与仿真[J]. 红外技术, 2015, 37(9): 778-782.
Liu Feng, Shi Feng, Jiao Gangcheng, et al. Design and simulation of p-InGaAs/p-InP heterojunction within short-wave infrared threshold field-assisted photocathode[J]. Infrared Technol., 2015, 37(9): 778-782.
[8] Taylor M B, Barrera G D, Allan N L, et al. Free-energy derivatives and structure optimization within quasi-harmonic lattice dynamics[J]. Phys. Rev. B, 1997, 56(22): 14380-14390.
[9] Segall M D, Lindan P J D, Probert M J, et al. First-principles simulation: ideas, illustrations and the CASTEP code[J]. J. of Physics: Condensed Matter, 2002, 14(11): 2717-2744.
[10] Komsa H P, Arola E, Pakarinen J, et al. Beryllium doping of GaAs and GaAsN studied from first principles[J]. Phys. Rev. B, Condensed Matter, 2009, 79(11): 115208.
[11] Zhang L, Mcmahon W E, Wei S H. Passivation of deep electronic states of partial dislocations in GaAs: A theoretical study[J]. Appl. Phys. Lett., 2010, 96(12): 121912.
[12] Ceperley D M, Alder B J. Ground state of the electron gas by a stochastic method[J]. Phys. Rev. Lett., 1980, 45(7): 566-569.
[13] Perdew J P, Burke K, Ernzerhof M. Generalized gradient approximation made simple[J]. Phys. Rev. Lett., 1998, 77(18): 3865-3868.
[14] Chadi D J. Special points for Brillouin-zone integrations[J]. Phys. Rev. B, 1977, 16(4): 1746-1747.
[15] Pickett W E. Pseudopotential methods in condensed matter applications[J]. Computer Phys. Reports, 1989, 9(3): 115-197.
[16] Tasker W P. The stability of ionic crystal surfaces[J]. J. of Physics C: Solid State Phys., 1979, 12(22): 4977-4984.
[17] Li X Z, Xie Q, Chen Q, et al. The study on the electronic structure and optical properties of OsSi2[J]. Acta Phys. Sin., 2010, 59(3): 2016-2021.
[18] Du Y, Chang B, Wang H, et al. First principle study of the influence of vacancy defects on optical properties of GaN[J]. Chinese Opt. Lett., 2012, 10(5): 39-43.
[19] Spicer W E. Photoemissive, photoconductive and optical absorption studies of Alkali-antimony compounds[J]. Phys. Rev., 1958, 112(1): 114-122.
李亚, 张俊举, 杜玉杰, 沙娓娓, 陈若曦. 外电场作用下InP电子结构与光学性质的计算[J]. 半导体光电, 2019, 40(6): 833. LI Ya, ZHANG Junju, DU Yujie, SHA Weiwei, CHEN Ruoxi. Calculation of Electronic Structure and Optical Properties of InP Under External Electric Field[J]. Semiconductor Optoelectronics, 2019, 40(6): 833.