电极材料对IGZO薄膜晶体管性能的影响
[1] Lim W, Jang J H, Kim S H, et al. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates [J]. Appl. Phys. Lett., 2008, 93(8):082102-1-3.
[2] Kamiya T, Mizuta H, Ahmed H, et al. Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices [J]. J. Vac. Sci. Technol., 2003, 21(3):1000-1003.
[3] Nomura K, Kamiya T, Hosono H, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Lett. Nat., 2004, 432(7016):488-492.
[4] Lim W, Kim S, Wang Y L, et al. High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering [J]. J. Electrochem. Soc., 2008, 155(6):H383-H385.
[5] Wang Y L, Ren F, Lim W, et al. Room temperature deposited indium zinc oxide thin film transistors [J]. Appl. Phys. Lett., 2007, 90(23):232103-1-3.
[6] Park J S, Kim H, Heo Y W, et al. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature [J]. Appl. Phys. Lett., 2007, 90(2):022106-1-3.
[7] Yabuta H, Sano M, Abe K, et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature RF-magnetron sputtering [J]. Appl. Phys. Lett., 2006, 89(11):112123-1-3.
[8] Kamiya T, Nomura K, Hosono H, et al. Present status of amorphous In-Ga-Zn-O thin-film transistors [J]. Sci. Technol. Adv. Mater., 2010, 11(4):044305-1-23.
[9] Liu H Y, Sun R G. Laminated active matrix organic light-emitting devices [J]. Appl. Phys. Lett., 2008, 92(6):063304-1-3.
[10] Shimura Y, Nomura K, Hosono H, et al. Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes [J]. Thin Solid Films, 2008, 516(17):5899-5902.
[11] Na J H, Kitamura M, Arakawa Y. High field-effect mobility amorphous InGaZnO transistorswith aluminum electrodes [J]. Appl. Phys. Lett., 2008, 93(6):063501-1-3.
[12] Jeong J, Kim J, Lee G J, et al. Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes [J]. Appl. Phys. Lett., 2012, 100(11):112109-1-3.
[14] Ahn B D, Shin H S, Kim H J, et al. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors [J]. Appl. Phys. Lett., 2008, 93(20):203506-1-3.
[15] Herbert B. Michaelson. The work function of the elements and its periodicity [J]. J. Appl. Phys., 1977, 48(11):4729-4733.
[16] Shimura Y, Nomura K, Hosono H, et al. Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes [J]. Thin Solid Films, 2008, 516(11):5899-5902.
刘冲, 韦敏, 杨帆, 贾卓, 邓宏. 电极材料对IGZO薄膜晶体管性能的影响[J]. 发光学报, 2014, 35(11): 1365. LIU Chong, WEI Min, YANG Fan, JIA Zhuo, DENG Hong. Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014, 35(11): 1365.