中国激光, 2013, 40 (1): 0106003, 网络出版: 2012-12-05   

利用X射线衍射研究Mg掺杂的InN的快速退火特性

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction
作者单位
南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室, 江苏 南京 210093
引用该论文

王健, 谢自力, 张韵, 滕龙, 李烨操, 曹先雷, 丁煜, 刘斌, 修向前, 陈鹏, 韩平, 施毅, 张荣, 郑有炓. 利用X射线衍射研究Mg掺杂的InN的快速退火特性[J]. 中国激光, 2013, 40(1): 0106003.

Wang Jian, Xie Zili, Zhang Yun, Teng Long, Li Yecao, Cao Xianlei, Ding Yu, Liu Bin, Xiu Xiangqian, Chen Peng, Han Ping, Shi Yi, Zhang Rong, Zheng Youliao. Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction[J]. Chinese Journal of Lasers, 2013, 40(1): 0106003.

参考文献

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[2] J. Wu, W. Walukiewicz, K. M. Yu et al.. Unusual properties of the fundamental band gap of InN[J]. Appl. Phys. Lett., 2002, 80(21): 3967~3969

[3] B. E. Foutz, S. K. OpLeary, M. S. Shur et al.. Transient electron transport in wurtzite GaN, InN, and AlN[J]. J. Appl. Phys., 1999, 85(11): 7727~7734

[4] M. Bockowski. High pressure direct synthesis of Ⅲ-Ⅴ nitrides[J]. Phys. B, 1999, 265(1-4): 1~5

[5] M. Higashiwaki, T. Matsui. High quality InN film growth on a low temperature grown GaN intermediate layer by plasma assisted molecular beam epitaxy[J]. Jpn. J. Appl. Phys., Part 2, 2002, 41(5B): L540~L542

[6] I. Mahboob, T. D. Veal, C. F. McConville et al.. Intrinsic electron accumulation at clean InN surfaces[J]. Phys. Rev. Lett., 2004, 92(3): 036804

[7] K. Sugita, K. Sasamoto, A. Hashimoto et al.. Effects of Cp2Mg supply on MOVPE growth behavior of InN[J]. Phys. Status Solidi, 2011, C8(7-8): 2506~2508

[8] P. Fewster. X-Ray Scattering from Semiconductors[M]. London: Imperial College Press, 2000

[9] R. Chierchia, T. Bottcher, H. Heinke et al.. Microstructure of heteroepitaxial GaN revealed by X-ray diffraction[J]. J. Appl. Phys., 2003, 93(11): 8918~8925

[10] V. Srikant, J. S. Speck, D. R. Clarke. Mosaic structure in epitaxial thin films having large lattice mismatch[J]. J. Appl. Phys., 1997, 82(9): 4286~4296

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[12] T. Metzger, R. Hopler, E. Born et al.. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry[J]. Philosophical Magazine A, 1998, 77(4): 1013~1025

[13] Th. de Keijser, E. J. Mittemeijer, H. C. F. Rozendaal. The determination of crystallite-size and lattice-strain parameters in conjunction with the profile-refinement method for the determination of crystal structures[J]. J. Appl. Cryst., 1983, 16(3): 309~316

[14] B. Liu, R. Zhang, Z. L. Xie et al.. Microstructure and dislocation of epitaxial InN films revealed by high resolution X-ray diffraction[J]. J. Appl. Phys., 2008, 103(2): 023504

[15] J. Gao, B. Liu, Y. Pan et al.. Effect of rapid thermal annealing on the properties of InN epilayers[J]. J. Kor. Phys. Soc., 2008, 52(11): S128~S131

王健, 谢自力, 张韵, 滕龙, 李烨操, 曹先雷, 丁煜, 刘斌, 修向前, 陈鹏, 韩平, 施毅, 张荣, 郑有炓. 利用X射线衍射研究Mg掺杂的InN的快速退火特性[J]. 中国激光, 2013, 40(1): 0106003. Wang Jian, Xie Zili, Zhang Yun, Teng Long, Li Yecao, Cao Xianlei, Ding Yu, Liu Bin, Xiu Xiangqian, Chen Peng, Han Ping, Shi Yi, Zhang Rong, Zheng Youliao. Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction[J]. Chinese Journal of Lasers, 2013, 40(1): 0106003.

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