高斯分布激光散焦距离对激光转印Cu薄膜形貌影响及机理分析
[1] 刘云燕, 程传福, 宋洪胜 等. 激光溅射沉积制备的ZnOGa薄膜表面形貌分析[J]. 光学学报, 2011, 31(1): 0131003
[2] 宋晶, 耿永友. 用于蓝光(405 nm)激光直写的聚乙烯醇/银纳米复合材料薄膜的制备[J]. 光学学报, 2012, 32(9): 0931003
[3] 王俊俏, 张心正, 孙立萍 等. 激光诱导银纳米颗粒薄膜和微结构[J]. 中国激光, 2011, 38(1): 0107001
[4] 罗乐, 汪毅, 储雅琼 等. 氮气压强对脉冲激光沉积类金刚石薄膜和红外光学特性的影响[J]. 中国激光, 2011, 38(9): 0907001
[5] 郑晋翔, 郑晓华, 沈涛 等. 递进式脉冲激光沉积CNx薄膜的组织结构与摩擦学特性[J]. 中国激光, 2012, 39(6): 0607001
[6] J. Bohandy, B. F. Kim, F. J. Adrian. Metal deposition from a supported metal film using an excimer laser [J]. J. Appl. Phys., 1986, 60(4): 1538~1539
[7] F. J. Adrian, J. Bohandy, B. F. Kim et al.. A study of the mechanism of metal deposition by the laser-induced forward transfer process [J]. J. Vac. Sci. Technol., 1987, 5(5): 1490~1494
[8] S. Bera, A. J. Sabbah, J. M. Yarbrough et al.. Optimization study of the femtosecond laser-induced forward-transfer process with thin aluminum films [J]. Appl. Opt., 2007, 46(21): 4650~4659
[10] A. Palla-Papavlu, V. Dinca, C. Luculescu et al.. Laser induced forward transfer of soft materials [J]. J. Opt., 2010, 12(12): 124014
[11] J. Shaw-Stewart, B. Chu, T. Lippert et al.. Improved laser-induced forward transfer of organic semiconductor thin films by reducing the environmental pressure and controlling the substrate-substrate gap width [J]. Appl. Phys. A-Mater., 2011, 105(3): 713~722
[12] B. Hopp, T. Smausz, G. Szabo et al.. Femtosecond laser printing of living cells using absorbing film-assisted laser-induced forward transfer [J]. Opt. Eng., 2012, 51(1): 014302
[13] P. Serra, M. Colina, J. M. Fernandez-pradas et al.. Preparation of functional DNA microarrays through laser-induced forward transfer [J]. Appl. Phys. Lett., 2004, 85(9): 1639~1641
[14] C. Germain, L. Charron, L. Lilge et al.. Electrodes for microfluidic devices produced by laser induced forward transfer [J]. Appl. Surf. Sci., 2007, 253(19): 8328~8333
[15] R. Fardel, M. Nagel, F. Nuesch et al.. Fabrication of organic light-emitting diode pixels by laser-assisted forward transfer [J]. Appl. Phys. Lett., 2007, 91(6): 061103
[16] H. Y. Kuo, S. J. Wang, P. R. Wang et al.. A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2008, 92(2): 021105
[17] K. Bao, X. N. Kang, B. Zhang et al.. Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off [J]. Appl. Phys. Lett., 2008, 92(14): 141104
[18] J. Shaw-Stewart, T. Lippert, M. Nagel et al.. Sequential printing by laser-induced forward transfer to fabricate a polymer light-emitting diode pixel [J]. ACS Appl. Mater. Inter., 2012, 4(7): 3535~3541
[19] C. Wang, A. S. Holmes. Laser-assisted bumping for flip chip assembly [J]. IEEE T. Electron. Pack., 2001, 24(2): 109~114
[20] A. S. Holmes, S. M. Saidam. Sacrificial layer process with laser-driven release for batch assembly operations [J]. J. Microelectromech. S., 1998, 7(4): 416~422
[21] R. Guerre, U. Drechsler, D. Jubin et al.. Selective transfer technology for microdevice distribution [J]. J. Microelectromech. S., 2008, 17(1): 157~165
[22] R. J. Baseman, N. M. Froberg. Time-resolved transmission of thin gold films during laser blow-off [J]. Appl. Phys. Lett., 1989, 55(18): 1841~1983
[23] R. J. Baseman, N. M. Froberg, J. C. Andreshak et al.. Minimum fluence for laser blow-off of thin gold films at 248 and 532 nm [J]. Appl. Phys. Lett., 1990, 56(15): 1412~1414
[24] N. T. Kattamis, M. S. Brown, C. B. Arnold. Finite element analysis of blister formation in laser-induced forward transfer [J]. J. Mater. Res., 2011, 26(18): 2438~2449
刘威, 窦广彬, 王春青, 田艳红, 叶交托. 高斯分布激光散焦距离对激光转印Cu薄膜形貌影响及机理分析[J]. 中国激光, 2013, 40(5): 0507001. Liu Wei, Dou Guangbin, Wang Chunqing, Tian Yanhong, Ye Jiaotuo. Effect of Defocus Distance on Morphology of Gaussian Distributed Laser Induced Forward Transfer Cu Film and Mechanism Analysis[J]. Chinese Journal of Lasers, 2013, 40(5): 0507001.