极紫外投影光刻掩模阴影效应分析
[2] H. Kang, S. Hansen, Jan van Schoot et al.. EUV simulation extension study for mask shadowing effect and its correction[C]. SPIE, 2008, 6921: 59213
[3] T. Schmoeller, T. Klimpel, I. Kim et al.. EUV pattern shift compensation strategies[C]. SPIE, 2008, 6921: 69211B
[4] M. Sugawara, I. Nishiyama. Mask pattern correction to compensate for the effects of off-axis incidence in EUV lithography[C]. SPIE, 2006, 6283: 62830L
[5] Philip C. W. Ng, Kuen-Yu Tsai, Fu-Min Wang et al.. Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects[J]. J. Micro/Nanolith. MEMS, 2011, 10(1): 013004
[6] Vivek Bakshi. EUV Lithography[M]. Washington: SPIE Press, 2009. 326~373
[7] S. Rizvi. Handbook of Photomask Manufacturing Technology[M]. Boca Raton Fla.: Taylor & Francis, 2005. 271~275
[8] P. Evanschitzky, A. Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method[C]. SPIE, 2007, 6533: 65330Y
[9] 曹宇婷, 王向朝, 邱自成 等. 极紫外投影光刻掩模衍射简化模型的研究[J]. 光学学报, 2011, 31(4): 0405001
[10] Yuting Cao, Xiangzhao Wang, A. Erdmann et al.. Analytical model for EUV mask diffraction field calculation[C]. SPIE, 2011, 8171: 81710N
[11] Tim Fuhner, Thomas Schnattinger, Gheorghe Ardelean et al.. Dr.LiTHO- A development and research lithography simulator[C]. SPIE, 2007, 6520: 65203F
[12] M. Born, E. Wolf. Principles of Optics[M]. Cambridge: Cambridge University Press, 2001. 412~514
[13] M. C. Lam, A. R. Neureuther. Simplified model for absorber feature transmissions on EUV masks[C]. SPIE, 2006, 6349: 63492H
曹宇婷, 王向朝, 步扬, 刘晓雷. 极紫外投影光刻掩模阴影效应分析[J]. 光学学报, 2012, 32(8): 0805001. Cao Yuting, Wang Xiangzhao, Bu Yang, Liu Xiaolei. Analysis of Mask Shadowing Effects in Extreme-Ultraviolet Lithography[J]. Acta Optica Sinica, 2012, 32(8): 0805001.