[1] Chunling Liu, Yanping Yao, Chunwu Wang, et al.. Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface[J]. Chin Opt Lett, 2008, 6(3): 183-185.

[2] G Beister, J Maege, D Gutsche, et al.. Simple method for examining sulphur passivation of facets in InGaAs-A1GaAs (0.98 μm)laser diodes[J]. Appl Phys Lett, 1996, 68(18): 2467-2468.

[3] Chunling Liu, Chunwu Wang, Yanping Yao, et al.. Process investigation of a-Si:H thin films prepared by DC magnetron sputtering[C]. SPIE, 2007, 6825. 682514.

[4] M Losurdo, P Capezzuto, G Bruno. Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation[J]. J Vac Sci Technol B, 1998, 16(5): 2665-2671.

[5] Yang C M, Uehara K, Kim S K, et al.. Highly c-axis-oriented AlN film using MOCVD for 5GHz band FBAR filter[C]. Proceedings of the IEEE Ultrasonics Symposium, 2003. 170-173.

[6] Zhang Wei, Soomeno Yoshihiro, Sasski Makoto, et al.. Low-temperature epitaxial growth of AlN films on sapphire by electron cyclotron resonance plasma-assisted chemical vapour deposition[J]. J Crystal Growth, 1993, 130(1-2): 308-312.

[7] Jacquot A, Lenoir B, Dattscher A, et al.. Opical and thermal characterization of AlN thin films deposited by pulsed laser deposition[J]. Appl Surf Sci, 2002, 186(1-4): 507-512.

[8] Gurumurugan K, Chen Hong, Harp G R, et al.. Growth and characterization of amorphous AlN thin films by reactive magnetron sputtering at low temperature[C]. Materials Research Society Symposium Proceedings, 1999, 535: 213-218.

[9] Kaneko S, Tanaka M, Masu K, et al.. Epitaxial growth of AlN film by low-pressure MOCVD in gas-beam-flow reactor[J]. J Cryst Growth, 1991, 115(1-4): 643-647.

[10] Kaya Kiyoshi, Kanno Yasuhito, Takaimshi Hireshi, et al.. Synthesis of AlN thin films on sapphire substrates by chemical vapor deposition of AlCl3·NH3 system and surface acoustic wave properties[J]. Jpn J Appl Phys, 1996, 35(5A): 2782-2787.

[11] A Werbowy, A Olszyna, K Zdunek, et al.. Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapour deposition(RIPACVD) method[J]. Thin Solid Films, 2004, 459(1-2): 160-164.

[12] 乔忠良, 薄报学, 公艳平, 等. 基于AlxNy绝缘介质膜的新型窗口大功率半导体激光器[J]. 中国激光, 2009, 36(9): 2277-2281.

    Qiao Zhongliang, Bo Baoxue, Gao Xin, et al.. High power conductor lasers of new window on insulation film of AlxNy[J]. Chinese J Lasers, 2009, 36(9): 2277-2281.

[13] 乔忠良, 薄报学, 高欣, 等. 无吸收模式滤波器结构高亮度大功率宽条形半导体激光器[J]. 中国激光, 2011, 38(4): 0402003.

    Qiao Zhongliang, Bo Baoxue, Gao Xin, et al.. High brightness high power broad area semiconductor lasers with no-absorption mode filter[J]. Chinese J Lasers, 2011, 38(4): 0402003.