采用溶胶-凝胶旋涂法在玻璃衬底上沉积纳米结构Ti、Ga共掺ZnO薄膜(TGZO，Ga掺杂量为1.0%(原子分数，下同))，用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、分光光度计(UV-Vis)、四探针测试仪、霍尔效应测试仪研究了Ti含量对TGZO薄膜的物相组成、表面形貌、电学和光学性能的影响。结果表明：所有TGZO薄膜均表现出六方纤锌矿的多晶结构，并具有(002)择优取向生长，在380~780 nm波长范围内具有良好的透射率(>86％)；随着Ti含量的增加，TGZO薄膜的晶粒尺寸和可见光平均透射率均先增加后减小，而光学带隙和电阻率先减小后增加；Ti掺杂量为1.0%时，具有最高的可见光透射率92.82%，最窄的光学带隙3.249 eV，以及最低电阻率2.544×10-3 Ω·cm。

Nano-structured Ti and Ga co-doped ZnO (TGZO) thin films were synthesized with 1.0%(atomic fraction, the same below) Ga and different concentrations of Ti by sol-gel spin coating method. The influences of Ti doping concentration on the phase composition, surface morphology, electrical and optical properties of TGZO films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis spectrophotometer, four point probes and Hall measurement system, respectively. The results show that all TGZO thin films exhibit polycrystalline with a hexagonal wurtzite structure and slight (002) preferred orientation, which show excellent transmittance (>86%) in the wavelength range between 380 nm to 780 nm. With the increase of Ti content, both the grain size and the average transmittance of visible light of the TGZO film increase first and then decrease, while the optical band gap and resistivity decrease and then increase. The highest visible light transmittance is 92.82%, the narrowest optical band gap is 3.249 eV and the lowest resistivity is 2.544×10-3 Ω·cm obtained when doping 1.0% Ti.