[1] Zhu Liyan, Fu Xiuhua. The technical development of the 850 nm high-luminance semiconductor lasers film ［J］. Journal of Changchun University of Science and Technology (长春理工大学学报), 2007, 30(1):18-20 (in Chinese).

[2] Qu Zhou, Liu Yang, Liu Bo. High power semiconductor laser and its applications in military ［J］. OME Information (光机电信息), 2006, 23(1):52-55 (in Chinese).

[3] Liu Yun, Liao Xinsheng, Qin Li, et al. Oxygen-free copper microchannel heat sink of high power semiconductor laser ［J］. Chin. J. Lumin. (发光学报), 2005, 26(1):109-114 (in Chinese).

[4] Liang Xuemei1, Lv Jinka, Cheng Liwen, et al. Structural design of vertical-external-cavity surface-emitting semiconductor laser with 920 nm ［J］. Chin. J. Lumin. (发光学报), 2010, 31(1):79-85 (in English).

[5] Cheng Liwen, Liang Xuemei, Qin Li, et al. Theoretical analysis of key parameters of 980nm optically pumped semiconductor vertical external cavity surface emitting laser ［J］. Chin. J. Lumin. (发光学报), 2008, 29(4):713-715 (in Chinese).

[6] Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high power VCSEL based on the thermal-offset-current ［J］. Chin. J. Lumin. (发光学报), 2009, 30(4):463-466 (in Chinese).

[7] Adamiec P, Sumpf B, Rüdiger I, et al. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality ［J］. Optics Lett., 2009, 34(16):2456-2458.

[8] Dittmar F, Klehr A, Sumpf B, et al. 9 W output power from an 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality ［J］. IEEE Quantum Electronics, 2007, 13(5):1194-1199.

[9] Kelemen M T, Weber J, Bihlmann G, et al. Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power ［J］. Electronics Lett., 2005, 41(18):1011-1013.

[10] Hwang R Y, Luh S W, Hsu J K, et al. Critical comparison of DH, SCH, and GRIN-SCH-SQW 780 nm ridge-waveguide lasers ［J］. SPIE, 1992, 1813:178-184.

[11] Wright D, Greve P, Fleischer J, et al. Laser beam width, divergence and beam propagation factor-an international standardization approach ［J］. Optical and Quantum Electronics, 1992, 24(9):993-1000.