电荷耦合器件的γ辐照剂量率效应研究
[1] BEBEK C, GROOM D, HOLLAND S, et al.. Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon [J]. IEEE Trans. Nucl. Sci., 2002, 49(3):1221-1225.
[2] CHUGG A M, JONES R, MOUTRIE M J, et al.. Analyses of images of neutron interactions and single particle displacement damage in CCD arrays [J]. IEEE Trans. Nucl. Sci., 2004, 51(6):3579-3584.
[3] SOLTAU H, HOLLA P, KEMMER J, et al.. Performance of the pn-CCD X-ray detector system designed for the XMM satellite mission [J]. Nucl. Instrum. Methods Phys. Res. Sect. A, 1996, 337(2-3):340-345.
[4] PICKEL J C, KALMA A H, HOPKINSON G R, et al.. Radiation effects on photonic imagers—a historical perspective [J]. IEEE Trans. Nucl. Sci., 2003, 50(3):671-688.
[5] HOPKINSON G R. Radiation effects on solid state imaging devices [J]. Radiat. Phys. Chem., 1994, 43(1-2):79-91.
[6] 从忠超,余学峰,崔江维,等. 半导体器件总剂量辐射效应的热力学影响 [J]. 发光学报, 2014, 35(4):465-469.
[7] 李豫东,汪波,郭旗,等. CCD与CMOS图像传感器辐射效应测试系统 [J]. 光学 精密工程, 2013, 21(11): 2778-2784.
[8] ENLOW E W, PEASE R L, COMBS W, et al.. Response of advanced bipolar processes to ionizing radiation [J]. IEEE Trans. Nucl. Sci., 1991, 38(6):1342-1351.
[9] FLEETWOOD D M, RIEWE L C, SCHWANK J R, et al.. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides [J]. IEEE Trans. Nucl. Sci., 1996, 43(6):2537-2546.
[10] FLEETWOOD D M, KOSIER S L, NOWLIN R N, et al.. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates [J]. IEEE Trans. Nucl. Sci., 1994, 41(6):1871-1883.
[11] JOHNSTON A H, RAX B G, LEE C I. Enhanced damage in linear bipolar integrated circuits at low dose rate [J]. IEEE Trans. Nucl. Sci., 1995, 42(6):1650-1659.
[12] RASHKEEV S N, CIRBA C R, FLEETWOOD D M, et al.. Physical model for enhanced interface-trap formation at low dose rates [J]. IEEE Trans. Nucl. Sci., 2002, 49(6):2650-2655.
[13] HJALMARSON H P, PEASE R L, WITCZAK S C, et al.. Mechanisms for radiation dose-rate sensitivity of bipolar transistors [J]. IEEE Trans. Nucl. Sci., 2003, 50(6):1901-1909.
[14] BOCH J, SAIGN F, SCHRIMPF R D, et al.. Physical model for the low-dose-rate effect in bipolar devices [J]. IEEE Trans. Nucl. Sci., 2003, 53(6):3655-3660.
[15] WITCZAK S C, LACOE R C, OSBORN J V, et al.. Dose-rate sensitivity of modern nMOSFETs [J]. IEEE Trans. Nucl. Sci., 2005, 52(6):2602-2608.
[16] RASHKEEV S N, FLEETWOOD D M, SCHRIMPF R D, et al.. Proton-induced defect generation at the Si-SiO2 interface [J]. IEEE Trans. Nucl. Sci., 2001, 48(6):2086-2092.
[17] WANG Z J, HE B P, YAO Z B, et al.. Dose rate and bias effects on COTS array CCDs induce dark signals increase [J]. IEEE Trans. Nucl. Sci., 2014, 61(3):1376-1380.
[18] HOPKINSON G R, DALE C J, MARSHALL P W. Proton effects in charge-coupled devices [J]. IEEE Trans. Nucl. Sci., 1996, 43(2):614-627.
[19] 汪波,李豫东,郭旗,等. 电荷耦合器件中子辐照诱发的位移效应 [J]. 发光学报, 2016, 37(1):44-49.
[20] SCHWANK J R, SHANEYFELT M R, FLEETWOOD D M, et al.. Radiation effects in MOS oxides [J]. IEEE Trans. Nucl. Sci., 2008, 55(4):1833-1853.
[21] MA T P, DRESSENDORFER P V. Ionizing Radiation Effects in MOS Devices and Circuits [M]. New York: Wiley, 1989.
[22] 雷仁方,王艳,高建威,等. CCD表面暗电流特性研究 [J]. 电子科技, 2014, 27(5):26-28.
LEI R F, WANG Y, GAO J W, et al.. Study on surface dark current of CCD [J]. Electron. Sci. Technol., 2014, 27(5):26-28. (in Chinese)
[23] BOCH J, SAIGNE F, SCHRIMPF R D, et al.. Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs [J]. IEEE Trans. Nucl. Sci., 2004, 51(5):2903-2907.
[24] 王祖军,罗通顶,杨少华,等. 电离辐照诱发面阵电荷耦合器暗信号增大试验 [J]. 中国空间科学技术, 2014, 34(4):72-78.
WANG Z J, LUO T D, YANG S H, et al.. Experiment of ionizing radiation induced array charge coupled devices dark signal increase [J]. Chin. Space Sci. Technol., 2014, 34(4):72-78. (in Chinese)
[25] VANHEUSDEN K, KARNA S P, PUGH R D, et al.. Thermally activated electron capture by mobile protons in SiO2 thin films [J]. Appl. Phys. Lett., 1998, 72(1):28-30.
[26] MA T P, DRESSENDORFER P V. Ionizing Radiation Effects in MOS Devices and Circuits [M]. New York: Wiley, 1989:87-192.
[27] FLEETWOOD D M, SCOFIELD J H. Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistor [J]. Phys. Rev. Lett., 1990, 64(5):579-582.
[28] LU Z Y, NICKLAW C J, FLEETWOOD D M, et al.. Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 [J]. Phys. Rev. Lett., 2002, 89(28):285505-1-4.
[29] WARREN W L, SHANEYFELT M R, SCHWANK J R, et al.. Paramagnetic defect centers in BESOI and SIMOX buried oxides [J]. IEEE Trans. Nucl. Sci., 1993, 40(6):1755-1764.
武大猷, 文林, 汪朝敏, 何承发, 郭旗, 李豫东, 曾俊哲, 汪波, 刘元. 电荷耦合器件的γ辐照剂量率效应研究[J]. 发光学报, 2016, 37(6): 711. WU Da-you, WEN Lin, WANG Chao-min, HE Cheng-fa, GUO Qi, LI Yu-dong, ZENG Jun-zhe, WANG Bo, LIU Yuan. Dose Rate Effects of γ Irradiation on CCDs[J]. Chinese Journal of Luminescence, 2016, 37(6): 711.