类金字塔状GaN微米锥的形貌及发光性能 | 发光学报 -- 中国光学期刊网

发光学报, 2019, 40 (1): 23, 网络出版: 2019-01-19

类金字塔状GaN微米锥的形貌及发光性能

Morphology and Optical Properties of GaN Micro-pyramid Structure

论文大纲

仝广运 ^1,2,*贾伟 ^1,2樊腾 ^1,2董海亮 ^1,2李天保 ^1,2贾志刚 ^1,2许并社 ^1,2

作者单位

¹ 太原理工大学新材料工程技术研究中心, 山西太原 030024

² 太原理工大学界面科学与工程教育部重点实验室, 山西太原 030024

类金字塔状GaN微米锥金属有机化合物化学气相沉积发光材料量子点 GaN micro-pyramid metal-organic chemical vapor deposition optical materials quantum dot

摘要

三维结构GaN基LED能够解决二维GaN基薄膜LED中存在的量子限制斯塔克效应、效率骤降、发光波长单一等问题。基于此, 本文对三维类金字塔状GaN微米锥的发光性能进行了详细的研究。通过金属有机化合物化学气相沉积原位沉积SiNx掩模层后, 首先制备了底面尺寸为8 μm、高度7.5 μm的类金字塔状GaN微米锥, 之后在其半极性面外延生长了3个周期的InGaN/GaN多量子阱。通过阴极荧光测试发现, 类金字塔状GaN微米锥的半极性面上不同位置发光波长不同; 变功率微区光致发光测试表明, 类金字塔状GaN微米锥的半极性面在InGaN/GaN多量子阱沉积之后极化场较弱; 对InGaN/GaN多量子阱进行了透射电镜表征, 结合阴极荧光光谱的结果最终解释了In原子在类金字塔状GaN微米锥上的迁移机理。利用其半极性面不同位置发光波长不同的结构特点及光学特性, 可以制备多波长发射LED。

Abstract

The recently developed 3D GaN-based light emitting diodes (LEDs) can solve problems associated with typical GaN-based thin film LEDs including the quantum-confined Stark effect, efficiency droop, and monochromatic wavelength. To resolve these issues, the micro-pyramids were synthesized and their luminescence properties were subsequently studied. First, GaN micro-pyramids with a base size of 8 μm and height of 7.5 μm were successfully fabricated after SiNx was deposited in situ by MOCVD, followed by three deposition periods of InGaN/GaN multiple quantum wells on the semi-polar facet of the GaN micro-pyramids. The cathodoluminescence measurements showed that the wavelength of the emission peaks varied on the semi-polar facet of the GaN micro-pyramids. According to micro-photoluminescence measurements obtained using different excitation power densities, the polarization field on the semi-polar facets of the GaN micro-pyramids containing InGaN/GaN multiple quantum wells was rather weak. The atomic migration mechanism was determined from the cathodoluminescence and transmission electron microscopy results. The GaN micro-pyramids can possibly be used for fabricating LEDs with multi-color emission due to their unique structures and optical properties.

参考文献

[1] NAMI M,ELLER R F,OKUR S,et al.. Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy ［J］. Nanotechnology, 2017,28(2)：025202.

[2] WANG D Q,ZHU T T,OLIVER R A,et al.. Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers ［J］. Opt. Lett., 2018 43(4)：799-802.

[3] BOUZID F,DEHIMI L,PEZZIMENTI F. Performance analysis of a Pt/n-GaN schottky barrier UV detector ［J］. J. Electron. Mater., 2017,46(11)：6563-6570.

[4] CHO J,PARK J H,KIM J K,et al.. White light-emitting diodes：history,progress,and future ［J］. Laser Photon. Rev., 2017,11(2)：1600147.

[5] TAKEUCHI T,SOTA S,KATSURAGAWA M,et al.. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells ［J］. Jpn. J. Appl. Phys., 1997,36(2)：L382-L385.

[6] PARK S H,CHUANG S L. Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers ［J］. Appl. Phys. Lett., 1998,72(24)：3103-3105.

[7] CHOI Y H,RYU G H,RYU H Y. Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model ［J］. J. Korean Phys. Soc., 2016,69(8)：1286-1289.

[8] ZHAO H S,CHEN C Y,LEE S W R. Effects of GaN blue LED chip and phosphor on optical performance of white light LED ［C］. Proceedinys of The 2012 2nd IEEE CPMT Symposium Japan,Kyoto,Japan, 2012：1-4.

[9] TIAN P F,MCKENDRY J J D, GU E,et al.. Fabrication,characterization and applications of flexible vertical InGaN micro-light emitting diode arrays ［J］. Opt. Express, 2016,24(1)：699-707

[10] ZHANG J,TIAN W,WU F,et al.. The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition ［J］. Appl. Surf. Sci., 2014,307：525-532.

[11] LIM S H,KO Y H,RODRIGUEZ C,et al.. Electrically driven,phosphor-free,white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures ［J］. Light Sci. Appl., 2016,5(2)：e16030.

[12] FU B,CHENG Y,SI Z,et al.. Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode ［J］. RSC Adv., 2015,5(122)：100646-100650.

[13] KO Y H,KIM J H,JIN L H,et al.. Electrically driven quantum dot/wire/well hybrid light-emitting diodes ［J］. Adv. Mater, 2011, 23(45):5364-5369.

[14] TIAN Z H,LI Y F,SU X L,et al.. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer ［J］. Opt. Express, 2018, 26(2)：1817-1824.

[15] 赵晨,贾伟,樊腾,等. 类金字塔状GaN微米结构的生长及其形貌表征［J］. 材料导报, 2017,31(22)：21-25.

ZHAO C,JIA W,FAN T,et al.. The growth and morphology characterization of GaN micro-pyramid structure ［J］. Mater. Rev., 2017,31(22)：21-25. (in Chinese)

[16] ZHANG M,CAI D M,ZHANG Y M,et al.. Investigation of the properties and formation process of a peculiar V-pit in HVPE-grown GaN film ［J］. Mater. Lett., 2017,198：12-15.

[17] KITAMURA S,HIRAMATSU K,SAWAKI N. Fabrication of GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates via selective metalorganic vapor phase epitaxy ［J］. Jpn. J. Appl. Phys., 1995,34(2)：L1184-L1186.

[18] LUNDSKOG A,PALISAITIS J,HSU C W,et al.. InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids ［J］. Nanotechnology, 2012,23(30)：305708.

[19] KISIN M V,EL-GHOROURY H S. Modeling of Ⅲ-nitride multiple-quantum-well light-emitting structures ［J］. IEEE J. Sel. Top. Quantum Electron., 2013,19(5)：1901410.

[20] CHICHIBU S,SOTA T,WADA K,et al.. Exciton localization in InGaN quantum well devices ［J］. J. Vac. Sci. Technol., 1998,16(4)：2204-2214.

[21] WANG T,NAKAGAWA D,WANG J,et al.. Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells ［J］. Appl. Phys. Lett., 1998,73(24)：3571-3573.

[22] SHCHUKIN V A,LEDENTSOV N N,BIMBERG D. Spontaneous formation of nanostructures on crystal surfaces ［J］. Phys. E Low Dimens. Syst. Nanostruct., 2001,9(1)：140-148.

[23] ZHOU S,LIU Y,WANG D,et al.. The calculation of InGaN quantum dot formation mechanism on GaN pyramid ［J］. Superlattices Microstruct., 2015,84：72-79.

仝广运, 贾伟, 樊腾, 董海亮, 李天保, 贾志刚, 许并社. 类金字塔状GaN微米锥的形貌及发光性能[J]. 发光学报, 2019, 40(1): 23. TONG Guang-yun, JIA Wei, FAN Teng, DONG Hai-liang, LI Tian-bao, JIA Zhi-gang, XU Bing-she. Morphology and Optical Properties of GaN Micro-pyramid Structure[J]. Chinese Journal of Luminescence, 2019, 40(1): 23.

论文摘要 Full Text 图 & 表补充材料基本信息知识挖掘 Metrics PDF全文参考文献 & 引文

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网

引用该论文： TXT | EndNote

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务，点击此处了解我们的隐私策略。如您需继续使用本网站，请您授权我们使用本地 cookie 来保存部分信息。

您最值得信赖的光电行业旗舰网络服务平台!

快速查询高级查询

最近搜索：

大家在搜：人工智能图像处理光子

热门搜索：机器视觉光通信光纤传感器