[1] Radasky W A, Baum C E, Wik M W. Introduction to the special issue on high-power electromagnetics (HPEM) and intentional electromagnetic interference(IEMI)[J]. IEEE Trans Electromagnetic Compatibility, 2004,46(3): 314.

[2] B 倞ckstr 倠m M G, L 倠vstrand K G. Susceptibility of electronic systems to high-power microwaves: summary of test experience[J]. IEEE Trans Electromagnetic Compatibility, 2004,46(3): 396-403.

[3] Kim K, Iliadis A A. Critical upsets of CMOS inverters in static operation due to high-power microwave interference[J]. IEEE Transactions on Electromagnetic Compatibility, 2007,49(4): 876-885.

[4] Chai Changchun, Ma Zhenyang, Ren Xingrong, et al. Hardening measures for bipolar transistors against microwave-induced damage[J]. Chinese Physics B, 2013,22(6): 68502.

[5] Kim K, Iliadis A A. Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference[J]. Solid-State Electronics, 2008,52(10): 1589-1593.

[6] Ren Xingrong, Chai Changchun, Ma Zhenyang, et al. Motion of current filaments in avalanching PIN diodes[J]. Journal of Semiconductors, 2013,34: 044004.

[7] 赵振国, 马弘舸, 赵刚, 等. PIN限幅器微波脉冲热损伤温度特性[J]. 强激光与粒子束, 2013, 25(7): 1741-1746. (Zhao Zhenguo, Ma Hongge, Zhao Gang, et al, Characteristics of temperature during PIN limiter thermal damage caused by microwaves. High Power Laser and Particle Beams, 2013, 25(7): 1741-1746)

[8] 范菊平, 张玲, 贾新章. 双极型晶体管高功率微波的损伤机理[J]. 强激光与粒子束, 2010, 22(6): 1319-1322. (Fan Juping, Zhang Ling, Jia Xinzhang. HPM damage mechanism on bipolar transistors. High Power Laser and Particle Beams, 2010, 22(6): 1319-1322)

[9] 周怀安, 杜正伟, 龚克. 双极型晶体管损坏与强电磁脉冲注入位置的关系[J]. 强激光与粒子束, 2006, 18(4): 689-692. (Zhou Huaian, Du Zhengwei, Gong Ke. Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode. High Power Laser and Particle Beams, 2006, 18(4): 689-692)

[10] 陈曦, 杜正伟, 龚克. 外电路在电磁脉冲对双极型晶体管作用过程中的影响[J]. 强激光与粒子束, 2007,19(7): 1197-1202. (Chen Xi, Du Zhengwei, Gong Ke. Influence of circuit during injection of EMP into bipolar junction transistor. High Power Laser and Particle Beams, 2007, 19(7): 1197-1202)

[11] Moulthrop A A, Muha M S, Dybdal R B, et al. HPM damage thresholds of GaAs FETs and HEMTs [R]. TR-0090(5925-02)-1, 1992.

[12] Zhang Cunbo, Wang Honggang, Zhang Jiande, et al. Experiment and simulation of the nonlinear and transient responses of GaAs PHEMT injected with microwave pulses[J]. IEEE Transactions on Electromagnetic Compatibility, 2015,57(5): 1132-1138.

[13] 张存波, 王弘刚, 张建德. 高电子迁移率晶体管微波损伤仿真与实验研究[J]. 强激光与粒子束, 2014,26: 063014. (Zhang Cunbo, Wang Honggang, Zhang Jie. Simulation and experiment research on high electron mobility transistor microwave damage. High Power Laser and Particle Beams, 2014, 26: 063014)

[14] Yu Xinhai, Chai Changchun, Liu Yang, et al. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor[J]. Chinese Physics B, 2015,24: 048502.

[15] Synopsys Inc. Sentaurus device user guide[M]. California: Synopsys Inc., 2013.

[16] 范菊平. 典型半导体器件的高功率微波效应研究[D]. 西安: 西安电子科技大学, 2014. (Fan Juping. Study on the high power effects on typical semiconductor devices. Xi’an: Xidian University, 2014)