红外与毫米波学报, 2024, 43 (1): 85, 网络出版: 2023-12-26
一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法【增强内容出版】
An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement
铟化磷高电子迁移率晶体管 等效电路模型 寄生电阻 器件建模 InP high electron mobility transistor（HEMT） equivalent circuit model extrinsic resistances modeling
摘要
提出了一种改进的高电子迁移率晶体管寄生电阻提取方法，该方法利用了特殊偏置点（Vgs > Vth，Vds = 0 V）的等效电路模型，推导了寄生电阻的表达式，采用半分析法对寄生电阻进行了优化。1 ~110 GHz S参数实测结果和仿真的S参数一致，证明该方法是有效的。
Abstract
An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor (HEMT) is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points (Vgs > Vth, Vds = 0 V). The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analytical method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.
李织纯, 吕渊婷, 张傲, 高建军. 一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法[J]. 红外与毫米波学报, 2024, 43(1): 85. Zhi-Chun LI, Yuan-Ting LYU, Ao ZHANG, Jian-Jun GAO. An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 85.
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