三波长单脉冲纳秒激光损伤CCD实验研究

张鑫; 牛春晖; 马牧燕; 秦绪志; 张亚男

doi:doi:10.14128/j.cnki.al.20204002.300

应用激光, 2020, 40 (2): 300, 网络出版: 2020-08-06

三波长单脉冲纳秒激光损伤CCD实验研究

Experimental Study on Three-wavelength Single-pulse Nanosecond Laser Damage CCD

论文大纲

张鑫 ^*牛春晖马牧燕秦绪志张亚男

作者单位

北京信息科技大学仪器科学与光电工程学院, 北京 100192

单脉冲激光损伤阈值损伤机理 single-pulse laser damage threshold CCD CCD damage mechanism

摘要

开展了波长分别为1 064 nm、532 nm和416 nm, 脉宽均为5 ns的单脉冲激光损伤CCD的实验, 观测并比较了不同损伤阶段三种波长激光各自损伤CCD的视频图像、微观形貌、阈值和芯片引脚的电阻阻值, 分析了CCD的损伤机理。在532 nm和416 nm激光所损伤CCD视频输出图像中发现了并未出现在1 064 nm激光所损伤CCD视频输出图像中的黑点现象; CCD发生损伤时, 微透镜层的损伤状况随辐照激光波长减小而愈加严重; 1 064 nm激光损伤CCD的阈值最高, 532 nm和416 nm激光损伤CCD的阈值相近。与未损伤的CCD相比, 完全失效CCD的基底与垂直移位寄存器的电阻、垂直移位寄存器间的电阻明显下降, 由此推断, 基底与多晶硅电极的短路或多晶硅电极间的短路是造成CCD白屏的主要原因。

Abstract

In this paper, the experiments of single-pulse laser damage charge coupled device ( CCD ) with wavelengths of 1 064 nm, 532 nm and 416 nm and pulse width of 5 ns were carried out, respectively. The video images, microstructural morphology, damage threshold and resistance values between different pins of the chips of the CCDs, which damaged separately by three wavelengths of laser at different damage stages, were observed, measured and compared. And the damage mechanism of the CCD was analyzed. Black spots were found in the video output image of the CCD damaged by the 532 nm and 416 nm lasers. However, this phenomenon was not observed in the video output image of the CCD damaged by the 1 064 nm laser. When damage occurs in the CCD, the damage of the microlens layer becomes more serious as the wavelength of the irradiated laser decreases. And the threshold of the CCD damaged by the 1 064 nm laser is the highest, and the threshold of the CCD damaged by the 532 nm and 416 nm laser is similar; Compared with the undamaged CCD, the resistance between the substrate and the vertical shift registers and the resistance between the vertical shift registers of the completely invalid CCD significantly decrease. Therefore, it is concluded that the short circuit between the substrate and the polysilicon electrodes or the short circuit between the polysilicon electrodes is the main reason for the white screen of the CCD.

参考文献

[1] BECKER MICHAEL F, ZHANG CHENZHI, WATKINS STEVE E, et al.Laser-induced damage to silicon CCD imaging sensors［J］.Proceedings of SPIE-The International Society for Optical Engineering, 1989(1105): 68-77.

[2] BECKER MICHAEL F, ZHANG CHENZHI, BLARRE LUDOVIC, et al.Laser-induced functional damage to silicon CCD sensor arrays［J］.Proceedings of SPIE-The International Society for Optical Engineering, 1991(1624): 67-79.

[3] ZHANG CHENZHI, WATKINS STEVE E, WALSER RODGER M, et al.Laser-induced damage to silicon charge-coupled imaging devices［J］.Optical Engineering, 1991, 30(5): 651-657.

[4] 郝向南, 李化, 聂劲松, 等.不同工作状态激光对可见光CCD的损伤实验［J］.光电工程, 2012, 39(9): 113-118.

HAO XIANGNAN, LI HUA, NIE JINGSONG, et al.Experiment of visible CCD damaged by laser operating in different state［J］.Opto-Electronic Engineering, 2012, 39(9): 113-118.

[5] 朱志武, 张震, 程湘爱, 等.单脉冲激光对CCD探测器的硬损伤及损伤概率［J］.红外与激光工程, 2013, 42(1): 113-118.

ZHU ZHIWU, ZHANG ZHEN, CHENG XIANGAI, et al.Damage phenomenon and probability of CCD detectors under single-laser-pulse irradiation［J］.Infrared and Laser Engineering, 2013, 42(1): 113-118.

[6] 邵俊峰, 刘阳, 王挺峰, 等.皮秒激光对电荷耦合器件多脉冲损伤效应研究［J］.兵工学报, 2014, 35(9): 1403-1408.

SHAO JUNFENG, LIU YANG, WANG TINGFENG, et al.Damage effect of charged coupled device with multiple-pulse picosecond laser［J］.Acta Armamentarii, 2014, 35(9): 1403-1408.

[7] 赵洋, 金光勇, 李明欣, 等.毫秒脉冲激光损伤CCD探测器的实验研究［J］.激光技术, 2017, 41(5): 632-636.

ZHAO YANG, JIN GUANGYONG, LI MINGXIN, et al.Experimental study about CCD detectors damaged by millisecond pulsed laser［J］.Laser Technology, 2017, 41(5): 632-636.

[8] 韩敏, 聂劲松, 叶庆, 等.1.06 μm连续激光损伤CCD的进程及损伤对成像能力的影响［J］. 中国激光, 2018, 45(9): 192-200.

HAN MIN, NIE JINGSONG, YE QING, et al.Damage proceeding and effects of damage on imaging capability of charge coupled device by 1.06 μm continuous laser［J］.Chinese Journal of Lasers, 2018, 45(9): 192-200.

[9] 李化, 王玺, 聂劲松, 等.脉冲宽度对CCD探测器激光损伤效果的影响［J］.红外与激光工程, 2013, 42(S2): 403-406.

LI HUA, WANG XI, NIE JINGSONG, et al.Influence of pulse width on damage effects of CCD detector induced by laser［J］.Infrared and Laser Engineering, 2013, 42(S2): 403-406.

[10] 蔡跃, 叶锡生, 马志亮, 等.170 ps激光脉冲辐照可见光面阵Si-CCD的实验［J］.光学精密工程, 2011, 19(2): 457-462.

CAI YUE, YE XISHENG, MA ZHILIANG et al.Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD［J］.Opt Precision Eng, 2011, 19(2): 457-462.

[11] 沈洪斌, 沈学举, 周冰, 等.532 nm脉冲激光辐照CCD实验研究［J］.强激光与粒子束, 2009, 21(10): 1449-1454.

SHEN HONGBIN, SHEN XUEJU, ZHOU BING, et al.Experimental study of 532 nm pulsed laser irradiating CCD［J］.High Power Laser and Particle Beams, 2009, 21(10): 1449-1454.

[12] 邱冬冬, 张震, 王睿, 等.脉冲激光对CCD成像器件的破坏机理研究［J］.光学学报, 2011, 31(2): 144-148.

QIU DONGDONG, ZHANG ZHEN, WANG RUI et al.Mechanism research of pulsed-laser induced damage to CCD imaging device［J］.Acta Optica Sinica, 2011, 31(2): 144-148.

[13] 高刘正.激光辐照破坏CCD的微观机理分析［D］.长沙: 国防科学技术大学, 2013.

GAO LIUZHENG.The micro damage mechanism of charge coupled device under laser irradiation［D］.Changsha: National University of Defense Technology, 2013.

[14] 栗兴良, 牛春晖, 马牧燕, 等.单脉冲激光损伤CCD探测器的有限元仿真［J］.激光技术, 2016, 40(5): 730-733.

LI XINGLIANG, NIU CHUNHUI, MA MUYAN, et al.Finite element simulation of damage characteristics of CCD detectors under single-laser-pulse irradiation［J］.Laser Technology, 2016, 40(5): 730-733.

[15] 姬亚玲.激光辐照聚合物材料改性研究［D］.北京: 北京工业大学, 2007.

JI YALING.Research on the properties of polymer induced by laser irradiation［D］.Beijing: Beijing University of Technology, 2007.

[16] 王璐璐.激光烧蚀聚合物损伤阈值行为的理论研究［D］.长春: 长春理工大学, 2009.

WANG LULU.Theoretical research on the threshold behavior of damage in laser ablations of Polymer［D］.Changchun: Changchun University of Science and Technology, 2009.

[17] 米本和也.CCD/CMOS图像传感器基础与应用［M］.陈榕庭, 彭美桂译.北京: 科学出版社, 2006: 26-27.

KAZUYA YONEMOTO.Foundation and application of CCD/CMOS image sensor［M］.CHEN RONGTING, PENG MEIJIA.Beijing: Science Press, 2006: 26-27.

[18] 王庆有.CCD应用技术［M］.天津: 天津大学出版社, 2000: 30-31.

WANG QINGYOU.CCD Application technology［M］.Tianjin: Tianjin University Press, 2000: 30-31.

张鑫, 牛春晖, 马牧燕, 秦绪志, 张亚男. 三波长单脉冲纳秒激光损伤CCD实验研究[J]. 应用激光, 2020, 40(2): 300. Zhang Xin, Niu Chunhui, Ma Muyan, Qin Xuzhi, Zhang Yanan. Experimental Study on Three-wavelength Single-pulse Nanosecond Laser Damage CCD[J]. APPLIED LASER, 2020, 40(2): 300.

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