发光学报, 2013, 34 (7): 911, 网络出版: 2013-07-16
InxGa1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系
Relationship Between InxGa1-xN Quantum-well Blue LEDs Photoelectric Properties and Quantum Well Bound State Energy Level
量子阱宽 效率下降 数值模拟 InGaN/GaN发光二极管 width of quantum well efficiency droop numerical simulate InGaN/GaN LED
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李国斌, 陈常水, 刘颂豪. InxGa1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系[J]. 发光学报, 2013, 34(7): 911. LI Guo-bin, CHEN Chang-shui, LIU Song-hao. Relationship Between InxGa1-xN Quantum-well Blue LEDs Photoelectric Properties and Quantum Well Bound State Energy Level[J]. Chinese Journal of Luminescence, 2013, 34(7): 911.