高效率GaN基高压LED芯片的制备及COB封装

黄晓升; 黄华茂; 王洪; 李静

doi:doi:10.3788/fgxb20153606.0692

发光学报, 2015, 36 (6): 692, 网络出版: 2015-06-25

高效率GaN基高压LED芯片的制备及COB封装

High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging

论文大纲

黄晓升 ^*黄华茂王洪李静

作者单位

华南理工大学物理与光电学院广东省光电工程技术研究开发中心, 广东广州 510640

高压LED 芯片制备封装基板发光效率 high-voltage light-emitting diode chip fabrication package substrate light-output efficiency

摘要

为提升GaN基高压LED芯片的出光性能,优化了芯片发光单元之间隔离沟槽的宽度.当隔离沟槽宽度为20 μm时,芯片的电学性能和光学性能最优.当注入电流为20 mA时,正向电压为50.72 V,输出光功率为373.64 mW,电光转换效率为36.83%.采用镜面铝基板和陶瓷基板进行了4颗芯片串联形式的COB封装.镜面铝基板的热导率和反射率均高于陶瓷基板,可提升HV-LED器件在大注入电流和高温时的发光性能.当注入电流为20 mA且基板温度为20 ℃时,镜面铝基板封装的HV-LED器件的正向电压是198.9 V,发光效率达122.2 lm/W.

Abstract

In order to enhance the light-output performance of GaN-based high-voltage light-emitting diodes (HV-LEDs),the width of isolation trench between light-emission cells was optimized.The electrical and optical performance is the best while the width is 20 μm.When the injection current is 20 mA,the forward voltage is 50.72 V,the light-output power is 373.64 mW,and the electro-optical conversion efficiency is 36.83%.Then,four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board (COB) technology.Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate,the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature.On condition that the injection current is 20 mA and the substrate temperature is 20 ℃,the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198.9 V and 122.2 lm/W,respectively.

参考文献

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黄晓升, 黄华茂, 王洪, 李静. 高效率GaN基高压LED芯片的制备及COB封装[J]. 发光学报, 2015, 36(6): 692. HUANG Xiao-sheng, HUANG Hua-mao, WANG Hong, LI Jing. High Efficiency GaN-based High-voltage Light-emitting Diode Chips and Its Chip-on-board Packaging[J]. Chinese Journal of Luminescence, 2015, 36(6): 692.

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