Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Sung-Wen Huang Chen; Yu-Ming Huang; Konthoujam James Singh; Yu-Chien Hsu; Fang-Jyun Liou; Jie Song; Joowon Choi; Po-Tsung Lee; Chien-Chung Lin; Zhong Chen; Jung Han; Tingzhu Wu; Hao-Chung Kuo

doi:doi:10.1364/PRJ.388958

Photonics Research, 2020, 8 (5): 05000630, Published Online: Apr. 15, 2020

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Download： 1195次

Sung-Wen Huang Chen ¹Yu-Ming Huang ^1,2Konthoujam James Singh ¹Yu-Chien Hsu ¹Fang-Jyun Liou ¹Jie Song ³Joowon Choi ³Po-Tsung Lee ¹Chien-Chung Lin ²Zhong Chen ⁴Jung Han ⁵Tingzhu Wu ^4,6,*Hao-Chung Kuo ^1,7,*

Author Affiliations

¹ Department of Photonics & Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China

² Institute of Photonic System, Taiwan Chiao Tung University, Tainan 71150, China

³ Saphlux Inc., Branford, Connecticut 06405, USA

⁴ Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China

⁵ Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA

⁶ e-mail: wutingzhu@xmu.edu.cn

⁷ e-mail: hckuo@faculty.nctu.edu.tw

Figures & Tables

Fig. 1. Process flow for the fabrication of a full-color RGB pixel array. (a) μ-LED array process. (b) Black PR matrices and p-electrode metal lines. (c) Red, green, and blue (transparent) pixel lithography process. (d) Color pixel bonding.

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Fig. 2. (a) Schematic diagram of the semipolar GaN grown on a patterned sapphire substrate. (b) Photograph of a 4 in. wafer of SF-free (20-21) InGaN/GaN LED grown on a patterned sapphire substrate. (c) Top-view microscopy image of SF-free (20-21) InGaN/GaN LED grown on a patterned sapphire substrate. (d) Cross-sectional SEM image of (20-21) GaN grown on a patterned sapphire substrate by orientation-controlled epitaxy.

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Fig. 3. (a) J-V curve of semipolar μ-LEDs, with image of lighting from device. (b) Electroluminescence spectrum of semipolar μ-LED with increasing applied current density. (c) Experimental data and simulation curves for normalized external quantum efficiency of semipolar and c-plane μ-LEDs. (d) Simulated electron current density throughout whole semipolar and c-plane μ-LED structures at 20 A/cm2 and 200 A/cm2 forward current density.

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Fig. 4. (a) Fluorescence microscopy image of RGB pixel. (b) Overlap relationship between blue μ-LED electroluminescence emission and absorption of quantum-dot photoresist. (c) Electroluminescence spectra of red and green pixels. (d) Electroluminescence microscope image of RGB pixels.

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Fig. 5. Peak wavelengths of c-plane and semipolar μ-LEDs in range 1 to 200 A/cm2 current density.

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Fig. 6. Color gamut of RGB pixel assembly from c-plane μ-LED and QDPR under various current densities in (a) CIE 1931 and (b) CIE 1976. Color gamut of RGB pixel assembly from semipolar μ-LED and QDPR under various current densities in (c) CIE 1931 and (d) CIE 1976.

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Sung-Wen Huang Chen, Yu-Ming Huang, Konthoujam James Singh, Yu-Chien Hsu, Fang-Jyun Liou, Jie Song, Joowon Choi, Po-Tsung Lee, Chien-Chung Lin, Zhong Chen, Jung Han, Tingzhu Wu, Hao-Chung Kuo. Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist[J]. Photonics Research, 2020, 8(5): 05000630.

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Download： 1195次

Fig. 1. Process flow for the fabrication of a full-color RGB pixel array. (a) μ-LED array process. (b) Black PR matrices and p-electrode metal lines. (c) Red, green, and blue (transparent) pixel lithography process. (d) Color pixel bonding.

Fig. 4. (a) Fluorescence microscopy image of RGB pixel. (b) Overlap relationship between blue μ-LED electroluminescence emission and absorption of quantum-dot photoresist. (c) Electroluminescence spectra of red and green pixels. (d) Electroluminescence microscope image of RGB pixels.

Fig. 5. Peak wavelengths of c-plane and semipolar μ-LEDs in range 1 to 200 A/cm2 current density.

Fig. 6. Color gamut of RGB pixel assembly from c-plane μ-LED and QDPR under various current densities in (a) CIE 1931 and (b) CIE 1976. Color gamut of RGB pixel assembly from semipolar μ-LED and QDPR under various current densities in (c) CIE 1931 and (d) CIE 1976.

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Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Download： 1195次

Fig. 1. Process flow for the fabrication of a full-color RGB pixel array. (a) μ-LED array process. (b) Black PR matrices and p-electrode metal lines. (c) Red, green, and blue (transparent) pixel lithography process. (d) Color pixel bonding.

Fig. 4. (a) Fluorescence microscopy image of RGB pixel. (b) Overlap relationship between blue μ-LED electroluminescence emission and absorption of quantum-dot photoresist. (c) Electroluminescence spectra of red and green pixels. (d) Electroluminescence microscope image of RGB pixels.

Fig. 5. Peak wavelengths of c-plane and semipolar μ-LEDs in range 1 to 200 A/cm2 current density.

Fig. 6. Color gamut of RGB pixel assembly from c-plane μ-LED and QDPR under various current densities in (a) CIE 1931 and (b) CIE 1976. Color gamut of RGB pixel assembly from semipolar μ-LED and QDPR under various current densities in (c) CIE 1931 and (d) CIE 1976.

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