本征非晶硅薄膜钝化晶体表面特性的DLTS分析

龚敏刚; 黄海宾; 田罡煜; 高超; 孙喜莲; 邓新华; 袁吉仁; 周浪

doi:doi:10.3788/lop54.121603

激光与光电子学进展, 2017, 54 (12): 121603, 网络出版: 2017-12-11

本征非晶硅薄膜钝化晶体表面特性的DLTS分析下载： 626次

DLTS Analysis of Characteristics of Crystal Surface Passivated by Intrinsic Amorphous Silicon

论文大纲

龚敏刚 ^1,2,3,*黄海宾 ¹田罡煜 ¹高超 ¹孙喜莲 ¹邓新华 ^2,3袁吉仁 ²周浪 ¹

作者单位

¹ 南昌大学光伏研究院, 江西南昌 330031

² 南昌大学理学院, 江西南昌 330031

³ 东南大学毫米波国家重点实验室, 江苏南京 210096

薄膜非晶硅钝化表面缺陷激活能俘获截面 thin films amorphous silicon passivation surface defect DLTS DLTS activation energy capture cross section

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摘要

以SiH4和H2作为气源, 采用热丝化学气相沉积法制备a-Si∶H薄膜钝化c-Si表面, 采用准稳态光电导法和I-V法分析了工艺参数对钝化效果的影响, 采用C-V法和深能级瞬态谱法对钝化后硅片表面的缺陷态进行测试。实验结果表明, 在频率为200 kHz时, 表面复合速率为54 cm/s的硅片的表面缺陷态密度为1.02×1011 eV-1·cm-2, 固定电荷密度为6.12×1011 cm-2; 本征a-Si∶H对硅片表面的钝化效果是由该薄膜在硅片表面引入的氢对应的键终止以及由其引入的固定电荷形成的场钝化效应共同决定的; 本征a-Si∶H钝化后硅片表面的深能级缺陷特征是电子陷阱, 激活能、俘获截面以及缺陷浓度分别为-0.235 eV、1.8×10-18 cm2、4.07×1013 cm-3。

Abstract

Using SiH4 and H2 as sources, we use hot-wire chemical vapor deposition to prepare intrinsic amorphous silicon (a-Si∶H) on c-Si wafers surface. Quasi-steady state photo conduction method and I-V method are used to analyze the influence of process parameters on the passivation effect. C-V method and deep level transient spectroscopy (DLTS) method are employed to test the defect state of the passivated silicon wafer surface. The experimental results show that, under the condition of 200 kHz, the surface defect density of the c-Si wafer with surface recombination velocity of 54 cm/s is 1.02×1011 eV-1·cm-2 and the fixed charge density is 6.12×1011 cm-2. The passivation effect of a-Si∶H on the surface of the silicon wafer is determined by the dangling bond on the surface of the thin film silicon saturated by hydrogen bond and the surface fixed charges forming the field passivation effect. The a-Si∶H passivated deep-level defect on the surface of the wafer is characterized as electron trap. The active energy, capture cross section and defect concentration is 0.235 eV, 1.8×10-18 cm2, and 4.07×1013 cm-3, respectively.

参考文献

[1] 黄海宾, 张东华, 汪已琳, 等. a-SiOx∶H钝化Cz-Si表面的工艺优化与机制分析［J］. 功能材料, 2014, 45(9): 9101-9103.

Huang Haibin, Zhang Donghua, Wang Yilin, et al. Optimization and operation mechanism analysis of Cz-Si wafer passivation by a-SiOx∶H film［J］. Journal of Functional Materials, 2014, 45(9): 9101-9103.

[2] Serenelli L, Martini L, Imbimbo L, et al. Metastability of a-SiOx∶H thin films for c-Si surface passivation［J］. Applied Surface Science, 2017, 392: 430-440.

[3] 柳琴, 刘成, 叶晓军, 等. 硅表面钝化及对异质结太阳电池特性的影响［J］. 功能材料与器件学报, 2012, 18(1): 40-45.

Liu Qin, Liu Cheng, Ye Xiaojun, et al. Silicon surface passivation and its effect on the performance of heterojunction solar cell［J］. Journal of Functional Materials and Devices, 2012, 18(1): 40-45.

[4] 杜文龙, 刘永生, 司晓东, 等. 晶体硅电池表面钝化的研究进展［J］. 材料科学与工程学报, 2015, 33(4): 613-618.

Du Wenlong, Liu Yongsheng, Si Xiaodong, et al. Research progress in crystalline silicon surface passivation［J］. Journal of Materials Science and Engineering, 2015, 33(4): 613-618.

[5] Jia X J, Zhou C L, Zhu J J, et al. Effect of PECVD SiNx/SiOxNx-Si interface property on surface passivation of silicon wafer［J］. Chinese Physics B, 2016, 25(12): 127301.

[6] 李凤, 马忠权, 孟夏杰, 等. 表面钝化对少子寿命、铁-硼对浓度和复合中心浓度的影响［J］. 科学通报, 2010, 55(2): 188-193.

[7] Bansal A, Srivastava P, Singh B R. On the surface passivation of c-silicon by RF sputtered Al2O3 for solar cell application［J］. Journal of Materials Science, 2015, 26(2): 639-645.

[8] 陆绮荣, 黄彬, 韦艳冰, 等. 基于深能级瞬态谱的深能级中心的仿真［J］. 计算机应用, 2011, 31(s1): 159-162.

Lu Qirong, Huang Bin, Wei Yanbing, et al. Simulation of deep level center based on deep-level transient spectroscopy［J］. Journal of Computer Applications, 2011, 31(s1): 159-162.

[9] 郝华丽, 刘文富. 太阳能电池效率的影响因素分析［J］. 现代电子技术, 2015, 38(12): 156-158.

Hao Huali, Liu Wenfu. Analysis on influence factors of solar cell efficiency［J］. Modern Electronics Technique, 2015, 38(12): 156-158.

[10] 杨学文, 郑家贵, 张静全, 等. CdTe/CdS太阳电池I-V, C-V特性研究［J］. 物理学报, 2006, 55(5): 2504-2507.

Yang Xuewen, Zheng Jiagui, Zhang Jingquan, et al. Characteristics of CdTe solar cell device［J］. Acta Physica Sinica, 2006, 55(5): 2504-2507.

[11] 罗志, 林璇英, 林舜辉, 等. 氢化非晶硅薄膜中氢含量及键合模式的红外分析［J］. 物理学报, 2003, 52(1): 169-174.

Luo Zhi, Lin Xuanying, Lin Shunhui, et al. Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films［J］. Acta Physica Sinica, 2003, 52(1): 169-174.

[12] 刘恩科, 朱秉升, 罗晋生. 半导体物理学［M］. 7版. 北京: 电子工业出版社, 2011: 37-56.

Liu Enke, Zhu Bingsheng, Luo Jinsheng. The physics of semiconductors［M］. 7th ed. Beijing: Publishing House of Electronics Industry, 2011: 37-56.

龚敏刚, 黄海宾, 田罡煜, 高超, 孙喜莲, 邓新华, 袁吉仁, 周浪. 本征非晶硅薄膜钝化晶体表面特性的DLTS分析[J]. 激光与光电子学进展, 2017, 54(12): 121603. Gong Mingang, Huang Haibin, Tian Gangyu, Gao Chao, Sun Xilian, Deng Xinhua, Yuan Jiren, Zhou Lang. DLTS Analysis of Characteristics of Crystal Surface Passivated by Intrinsic Amorphous Silicon[J]. Laser & Optoelectronics Progress, 2017, 54(12): 121603.

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