用动力学蒙特卡罗方法研究了3C-SiC(111)邻晶面的外延生长机制。生长温度、沉积速率和平台宽度对邻晶面外延生长模式有着重要的影响。模拟结果显示：在温度较低的情况下，晶体表面离散的分布着数量众多的晶核，其生长模式为二维岛核生长模式。当生长温度升高时，岛核主要分布于台阶边缘，晶体生长方式则转变为台阶推进与岛核成长共生的生长模式。其次，在沉积速率较低时，晶体主要生长方式为台阶推进模式，随着沉积速率增加, 晶体生长模式则转变为二维岛核生长模式。最后，岛核密度随平台宽度的增加而增加，在较低温度下，平台宽度对岛核密度的影响更加明显。

A kinetic Monte Carlo model has been developed to study mechanism of growth patterns on 3C-SiC(111) vicinal surface. The growth temperature, deposition rate and terrace width have great influence on the growth mechanism of the vicinal surface. The simulation result show that many islands are nucleated on the vicinal surface at low temperature and the crystal grows mainly by island nucleation. When the temperature increases, the islands are distribute in the edge of steps. As a result, the growth patterns are changed to mixed growth patterns. Secondly, the growth patterns are dominated by step flow growth at low deposition rate and two-dimensional nucleation growth regimes are dominated as the deposition rate increases. Finally, with the terrace width decreases adatoms preferentially attach to steps instead of nucleating new islands and the growth system crosses over from nucleation-dominated growth to step flow-dominated growth models.