Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

SUN Jian-xu; MI Wei; ZHANG De-shuang; YANG Zheng-chun; ZHANG Kai-liang; HAN Ye-mei; YUAN Yu-jie; ZHAO Jin-shi; LI Bo

doi:doi:10.1007/s11801-017-7065-y

光电子快报（英文版）, 2017, 13 (4): 295, Published Online: Sep. 13, 2018

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

论文大纲

SUN Jian-xu ¹MI Wei ^1,*ZHANG De-shuang ¹YANG Zheng-chun ¹ZHANG Kai-liang ¹HAN Ye-mei ¹YUAN Yu-jie ¹ZHAO Jin-shi ¹LI Bo ²

Author Affiliations

¹ Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China

² Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China

Abstract

Gallium oxide (Ga₂O₃) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga₂O₃films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga₂O₃). Structure analysis reveals a clear out-of-plane orientation of β-Ga₂O₃(201) || Al₂O₃(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga₂O₃film can be used in the UV optoelectronic devices.

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SUN Jian-xu, MI Wei, ZHANG De-shuang, YANG Zheng-chun, ZHANG Kai-liang, HAN Ye-mei, YUAN Yu-jie, ZHAO Jin-shi, LI Bo. Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering[J]. 光电子快报（英文版）, 2017, 13(4): 295.

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

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