插指型SiO2电流阻挡层对大功率LED外量子效率的影响 | 发光学报 -- 中国光学期刊网

发光学报, 2017, 38 (6): 786, 网络出版: 2017-06-30

插指型SiO₂电流阻挡层对大功率LED外量子效率的影响

Effect of Interdigitated SiO₂ Current Blocking Layer on External Quantum Efficiency of High Power LEDs

论文大纲

刘梦玲 ^*高艺霖胡红坡刘星童吕家将郑晨居丁星火周圣军

作者单位

武汉大学动力与机械学院, 湖北武汉 430072

大功率LED 插指型SiO2电流阻挡层电流拥挤外量子效率 high power LED interdigitated SiO2 CBL current crowding external quantum efficiency

摘要

为了改善蓝光大功率LED芯片p电极处的电流拥挤现象, 提高大功率LED芯片的外量子效率, 在ITO透明导电层与p-GaN间沉积插指型SiO2电流阻挡层。采用等离子体增强化学气相沉积的方法沉积SiO2薄膜, 再经过光刻和BOE湿法刻蚀技术制备插指型SiO2电流阻挡层。采用SimuLED仿真软件分析插指型SiO2电流阻挡层对大功率LED芯片电流扩展性能的影响, 研究插指型SiO2电流阻挡层对大功率LED芯片外量子效率的影响。结果发现, 插指型SiO2电流阻挡层结构可以有效改善p电极附近的电流拥挤现象。与没有沉积插指型SiO2电流阻挡层的大功率LED芯片相比, 光输出功率得到显著的提高。在350 mA的输入电流下, 沉积插指型SiO2电流阻挡层后的大功率LED芯片的外量子效率提高了18.7%。

Abstract

In order to alleviate current crowding around p-electrode of high power blue light-emitting diodes (LEDs) and improve its external quantum efficiency (EQE), a SiO2 current blocking layer (CBL) was deposited between ITO transparent conductive layer and p-GaN by plasma enhanced chemical vapor deposition (PECVD). An interdigitated SiO2 CBL pattern was then fabricated by photolithography and BOE wet etching process. The effect of interdigitated SiO2 CBL on the current spreading performance of high power LED was analyzed using commercial SimuLED package. It is found that the current crowding around the p-electrode is effectively alleviated by employing the interdigitated SiO2 CBL. Comparing with the high power LED without interdigitated SiO2 CBL, the light output power is significantly improved. At 350 mA injection current, the external quantum efficiency of the high power LED with interdigitated SiO2 CBL is 18.7% higher than that of LED without interdigitated SiO2 CBL.

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刘梦玲, 高艺霖, 胡红坡, 刘星童, 吕家将, 郑晨居, 丁星火, 周圣军. 插指型SiO₂电流阻挡层对大功率LED外量子效率的影响[J]. 发光学报, 2017, 38(6): 786. LIU Meng-ling, GAO Yi-lin, HU Hong-po, LIU Xing-tong, LYU Jia-jiang, ZHENG Chen-ju, DING Xing-huo, ZHOU Sheng-jun. Effect of Interdigitated SiO₂ Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. Chinese Journal of Luminescence, 2017, 38(6): 786.

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