红外与毫米波学报, 2018, 37 (4): 385, 网络出版: 2019-01-10
GaAs基InAs/AlSb二维电子气结构的生长优化
Growth optimization of GaAs-based InAs/AlSb 2DEG structure
二维电子气 迁移率 高电子迁移率晶体管(HEMT) 分子束外延(MBE) 2DEG mobility high electron mobility transistor (HEMT) molecular beam epitaxy (MBE)
摘要
采用分子束外延设备(MBE), 外延生长了InAs/AlSb二维电子气结构样品.样品制备过程中, 通过优化AlGaSb缓冲层厚度和InAs/AlSb界面厚度、改变AlSb隔离层厚度, 分别对比了材料二维电子气特性的变化, 并在隔离层厚度为5 nm时, 获得了室温电子迁移率为20500 cm2/V·s, 面电荷密度为2.0×1012/cm2的InAs/AlSb二维电子气结构样品, 为InAs/AlSb高电子迁移率晶体管的研究和制备提供了参考依据.
Abstract
InAs/AlSb two-dimensional electron gas (2DEG) structures were successfully grown by MBE equipment. 2DEG characteristics of samples were improved by optimizing the the thickness of AlGaSb buffer layer, the thickness of InAs/AlSb interface layer, and the thickness of AlSb spacer. The InAs/AlSb 2DEG structure sample with an electron mobility of 20500 cm2/V·s and a sheet electron density of 2.0×1012/cm2 were achieved when the thickness of AlSb spacer is fixed at 5 nm. It provides a reference for the research and fabrication of InAs/AlSb HEMT.
崔晓然, 吕红亮, 李金伦, 苏向斌, 徐应强, 牛智川. GaAs基InAs/AlSb二维电子气结构的生长优化[J]. 红外与毫米波学报, 2018, 37(4): 385. CUI Xiao-Ran, LYU Hong-Liang, LI Jin-Lun, SU Xiang-Bin, XU Ying-Qiang, NIU Zhi-Chuan. Growth optimization of GaAs-based InAs/AlSb 2DEG structure[J]. Journal of Infrared and Millimeter Waves, 2018, 37(4): 385.
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