反射各向异性谱在线监测852 nm半导体激光器AlGaInAs/AlGaAs量子阱的MOCVD外延生长

研究了生长温度和中断时间对AlGaInAs/AlGaAs量子阱外延质量的影响，并使用金属有机化合物汽相沉积(MOCVD)外延生长了AlGaInAs/AlGaAs量子阱和852 nm半导体激光器。通过使用反射各向异性谱(RAS)和光致发光谱在线监测和研究了AlGaInAs/AlGaAs界面的外延质量。研究结果表明高温生长可以导致从AlGaInAs量子阱层到AlGaAs势垒层的In析出现象。通过优化生长温度和在AlGaInAs/AlGaAs界面处使用中断时间，可以有效抑制In析出，从而获得AlGaInAs/AlGaAs陡峭界面。使用优化后的外延生长条件，外延生长了整个852 nm半导体激光器，使用RAS在线监测了激光器的外延生长过程，可以有效地分辨出不同外延层和生长阶段。

Abstract

The influence of the growth temperature and interruption time on the crystal quality of AlGaInAs/AlGaAs quantum well is investigated. The AlGaInAs/AlGaAs quantum well and whole 852 nm laser structures are grown by metal organic chemical vapor deposition (MOCVD). Reflectance anisotropy spectroscopy (RAS) and photoluminescence (PL) spectra are applied to measure the AlGaInAs/AlGaAs interfaces crystalline quality. The results show that high growth temperature will lead to indium segregation from AlGaInAs quantum well to AlGaAs barrier. By lowering the growth temperature and using of interruption time between AlGaInAs quantum well and AlGaAs barriers, the indium segregation effect can be effectively suppressed. The AlGaInAs/AlGaAs quantum well shows an abrupt interface and good crystalline quality under this growth conditions. With optimizing growth conditions, whole laser structures are grown. All the epilayer and growth process can be distinguished in situ by RAS transient spectra.

参考文献

[1] 张岩, 宁永强, 王烨等. 高功率低发散角垂直腔面发射激光器阵列［J］. 中国激光, 2010, 37(9): 2428～2432

Zhang Yan, Ning Yongqiang, Wang Ye et al.. High power vertical-cavity surface-emitting laser array with small divergence［J］. Chinese J. Lasers, 2010, 37(9): 2428～2432

[2] 崔锦江, 宁永强, 姜琛昱等. 大功率垂直腔底发射半导体激光器的光束质量［J］. 中国激光, 2011, 38(1): 0102002

Cui Jinjiang, Ning Yongqiang, Jiang Chenyu et al.. Beam quality of high power vertical-cavity bottom-emitting semiconductor lasers［J］. Chinese J. Lasers, 2011, 38(1): 0102002

[3] 王伟, 宁永强, 张金龙等. 高功率垂直腔底发射激光器的偏振特性［J］. 中国激光, 2012, 39(3): 0302002

Wang Wei, Ning Yongqiang, Zhang Jinlong et al.. Polarization properties of high-power vertical-cavity bottom-emitting lasers［J］. Chinese J. Lasers, 2012, 39(3): 0302002

[4] Zhang Yan, Ning Yongqiang, Zhang Lisen et al.. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs［J］. Opt. Express, 2011, 19(13): 12569～12581

[5] M. Zorn, J. T. Zettler, A. Knaller et al.. In situ determination and control of AlGaInP composition during MOVPE growth［J］. Journal of Crystal Growth, 2006, 287(2): 637～641

[6] F. Bugge, M. Zorn, V. Zeimer et al.. MOVPE growth of InGaAs/GaAsP-MQWs for high power laser diodes studied by reflectance anisotropy spectroscopy［J］. Journal of Crystal Growth, 2009, 311(4): 1065～1069

[7] J. T. Zettler, K. Haberland, M Zorn et al.. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques［J］. Journal of Crystal Growth, 1998, 195(1-4): 151～162

[8] M. Zorn, M. Weyers. Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy［J］. Journal of Physics D: Applied Physics, 2007, 40(3): 878～882

[9] K. Haberland, A. Bhattachary, M. Zorn et al.. MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy［J］. Journal of Electronic Materials, 2000, 29(4): 468～472

徐华伟, 宁永强, 曾玉刚, 张星, 张建伟, 张建, 张立森. 反射各向异性谱在线监测852 nm半导体激光器AlGaInAs/AlGaAs量子阱的MOCVD外延生长[J]. 中国激光, 2012, 39(5): 0502010. Xu Huawei, Ning Yongqiang, Zeng Yugang, Zhang Xing, Zhang Jianwei, Zhang Jian, Zhang Lisen. MOCVD Growth of AlGaInAs/AlGaAs Quantum Well for 852 nm Laser Diodes Studied by Reflectance Anisotropy Spectroscopy[J]. Chinese Journal of Lasers, 2012, 39(5): 0502010.

反射各向异性谱在线监测852 nm半导体激光器AlGaInAs/AlGaAs量子阱的MOCVD外延生长

关于本站 Cookie 的使用提示

全站搜索

反射各向异性谱在线监测852 nm半导体激光器AlGaInAs/AlGaAs量子阱的MOCVD外延生长

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索